Direct Growth of AIN Thin Layer on (111)Si Substrate by RF-MBE

MRS Online Proceedings Library volume 512, pages405–410(1998)Cite this article

Abstract

The nitridation process of (111)Si surface has been studied by in-situ reflection high-energy electron diffraction (RHEED) and Auger electron spectroscopy (AES) measurements. It has been clarified that the nitridation of the Si surface is occurred even if the shutter of the discharged rf-plasma gun is closed. The growth process of AIN epilayer on the Si substrate by migration enhanced epitaxy (MEE) has been investigated by in-situ RHEED and atomic force microscopy (AFM) observations. It has been found that the AIN epilayer is directly grown on (111)Si by MEE growth.

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Affiliations

  1. Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, 441-8580, Japan

    Naoki Ohshima, Hiroo Yonezu, Shinobu Uesugi, Keisuke Gotoh & Seiji Yamahira

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  1. Naoki Ohshima
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  2. Hiroo Yonezu
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  3. Shinobu Uesugi
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  4. Keisuke Gotoh
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  5. Seiji Yamahira
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Correspondence to Naoki Ohshima.

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Ohshima, N., Yonezu, H., Uesugi, S. et al. Direct Growth of AIN Thin Layer on (111)Si Substrate by RF-MBE. MRS Online Proceedings Library 512, 405–410 (1998). https://doi.org/10.1557/PROC-512-405

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