GaN Materials for High Power Microwave Amplifiers

Abstract

The key parameters of GaN for use in microwave power amplifiers are presented. The electron-scattering effect of dislocations are presented for 2 DEG in HEMT devices. The use of the piezoelectric effect in designing Aly Ga1-yN/GaN HEMT structures is reviewed for a range of y.Short-gate device fabrication methods, and the device characterization, are presented. Maximum frequency of oscillation for.15 μm gates reached 140 GHz, while.3 μm gate power amplifiers reached 74% power-added efficiency at 3 GHz.

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Correspondence to Lester F. Eastman.

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Eastman, L.F., Chu, K., Smart, J. et al. GaN Materials for High Power Microwave Amplifiers. MRS Online Proceedings Library 512, 3–7 (1998). https://doi.org/10.1557/PROC-512-3

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