GaN Materials for High Power Microwave Amplifiers

MRS Online Proceedings Library volume 512, pages3–7(1998)Cite this article

Abstract

The key parameters of GaN for use in microwave power amplifiers are presented. The electron-scattering effect of dislocations are presented for 2 DEG in HEMT devices. The use of the piezoelectric effect in designing Aly Ga1-yN/GaN HEMT structures is reviewed for a range of y.Short-gate device fabrication methods, and the device characterization, are presented. Maximum frequency of oscillation for.15 μm gates reached 140 GHz, while.3 μm gate power amplifiers reached 74% power-added efficiency at 3 GHz.

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Affiliations

  1. School of Electrical Engineering, Cornell University, Ithaca, NY, 14853-5401, USA

    Lester F. Eastman, Kenneth Chu, Joseph Smart & J. Richard Shealy

Authors
  1. Lester F. Eastman
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  2. Kenneth Chu
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  3. Joseph Smart
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  4. J. Richard Shealy
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Correspondence to Lester F. Eastman.

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Eastman, L.F., Chu, K., Smart, J. et al. GaN Materials for High Power Microwave Amplifiers. MRS Online Proceedings Library 512, 3–7 (1998). https://doi.org/10.1557/PROC-512-3

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