The key parameters of GaN for use in microwave power amplifiers are presented. The electron-scattering effect of dislocations are presented for 2 DEG in HEMT devices. The use of the piezoelectric effect in designing Aly Ga1-yN/GaN HEMT structures is reviewed for a range of y.Short-gate device fabrication methods, and the device characterization, are presented. Maximum frequency of oscillation for.15 μm gates reached 140 GHz, while.3 μm gate power amplifiers reached 74% power-added efficiency at 3 GHz.
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N. Weimann, L. F. Eastman, P. Doppalapudi, H. M. Ng, and T. D. Moustakas, Journal of Applied Physics, 83, 7, (1 April 1998).
B. K. Ridley; private communication.
U. Mishra; private communication.
G. Gradinaru, M. A. Khan, N. C. Kav, and T. S. Serdarshan, Applied Physics Letters, 72, 12 (23 March 1998).
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Eastman, L.F., Chu, K., Smart, J. et al. GaN Materials for High Power Microwave Amplifiers. MRS Online Proceedings Library 512, 3–7 (1998). https://doi.org/10.1557/PROC-512-3