We have studied the pressure dependence of photoluminescence for various InGaN quantum wells of different Indium compositions. In contrast to classical quantum well systems such as GaAs/AlGaAs, the pressure coefficients of the photoluminescence peak position of wells of similar parameters can vary greatly, depending on conditions of growth. Generally, the pressure coefficient of the emission peak is much lower than the one predicted for a GaN-InN system. We show that this behavior can be related in most cases to the influence of the thick GaN layer compressibility on the strain in the InGaN quantum wells. However, in some cases (Nichia devices), the pressure coefficient of the emission peak seems to be unrelated to the shift of the energy gap of the material, suggesting the involvement of strongly localized electronic states
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Perlin, P., Iota, V., Weinstein, B.A. et al. High-pressure investigation of InGan quantum wells. MRS Online Proceedings Library 512, 399–404 (1998). https://doi.org/10.1557/PROC-512-399