Incorporation of Er into GaN by in-situ Doping During Halide Vapor Phase Epitaxy


The incorporation of Er into GaN by in-situ doping during halide vapor phase epitaxy has been investigated. The NH3, HCl, metallic Ga and Er were used as source materials, while N2 was employed as a carrier gas. The GaN:Er films were obtained at different Ga/Er source temperatures. The SIMS analysis shows that the steady state Er doping concentration can be as high as 2×1018 cm−3. All in-situ Er-doped samples luminescence at 1.54 μm due to the 4I13/24I15/2 transition of Er3+ at both low (11K) and room temperature. The higher the Ga/Er boat temperature, the stronger the 1.54 μm luminescence, implying a higher incorporation rate of Er into the GaN. The 4I11/24I15/2 transition luminescence, centered around 980 nm, can also be detected at both low and room temperature. The broad-spectrum PL measurements exhibited sharp bandedge luminescence without the presence of the yellow luminescence band.

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  1. 1

    H. Ennen, G. Pomrenke, A. Axmann, K. Eisele, W. Haydl and J. Schneider, Appl. Phys. Lett. 46, 381(1985)

    CAS  Article  Google Scholar 

  2. 2

    S. Sethi and P. K. Bhattacharya, J. Electron. Mater. 25, 467(1996)

    CAS  Article  Google Scholar 

  3. 3

    V. F. Masterov, Mat. Res. Soc. Symp. Proc. 301, 373(1993)

    CAS  Article  Google Scholar 

  4. 4

    J. M. Zavada and D. Zhang, Solid State Electron. 38, 1285(1995)

    CAS  Article  Google Scholar 

  5. 5

    T. D. Culp, J. G. Cederberg, B. Bieg, T. F. Kuech, K. L. Bray, D. Pfeiffer and C. H. Winter, unpublished

  6. 6

    M. C. Wu and E. H. Chen, J. Cryst. Growth, 139, 251(1994)

    CAS  Article  Google Scholar 

  7. 7

    A. Rolland, A. LeCorre, P. N. Favennec, M. Gauneau, B. Lambert, D. Lecrosnier, H. L’Haridon, D. Moutonnet and C. Rochaix, Electron. Lett. 24, 956(1988)

    Article  Google Scholar 

  8. 8

    P. S. Whitney, K. Uwei, H. Nakagome and K. Takahei, Electron. Lett. 24, 740(1988)

    Article  Google Scholar 

  9. 9

    P. N. Favennec, H. L’Haridon, M. Salvi, D. Moutonnet and Y. L. Guillou, Electron. Lett. 25, 718(1989)

    Article  Google Scholar 

  10. 10

    R. G. Wilson, R. N. Schwartz, C. R. Abernathy, S. J. Pearton, N. Newman, M. Rubin, T. Fu and J. M. Zavada, Appl. Phys. Lett. 65, 992(1994)

    CAS  Article  Google Scholar 

  11. 11

    C. H. Qiu, M. W. Leksono, J. I. Pankove, J. T. Torvik, R. J. Feuerstein and F. Namavar, Appl. Phys. Lett. 66, 562(1995)

    CAS  Article  Google Scholar 

  12. 12

    S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, R. N. Achwartz, R. G. Wilson, J. M. Zavada and J. Shul, Mat. Res. Soc. Symp. Proc. 422, 47(1996)

    CAS  Article  Google Scholar 

  13. 13

    S. Kim, S. J. Rhee, D. A. Turnbull, E. E. Reuter, X. Li, J. J. Coleman and S. G. Bishop, Appl. Phys. Lett. 71, 231(1997)

    CAS  Article  Google Scholar 

  14. 14

    J. D. MacKenzie, C. R. Abernathy, S. J. Pearton, S. M. Donovan, U. Hommerrich, M. Thaik, X. Wu, F. Ren, R. G. Wilson and J. M. Zavada, Mat. Res. Soc. Symp. Proc. 468, 123(1997)

    CAS  Article  Google Scholar 

  15. 15

    R. J. Molnar, K. B. Nichols, P. Maki, E. R. Brown and I. Melngailis, Mater. Res. Soc. Symp. Proc., 378, 479 (1995)

    CAS  Article  Google Scholar 

  16. 16

    R. Perkins, M. N. Horton, Z. Z. Bandic, T. C. McGill and T. F. Kuech, Mat. Res. Sci. Symp. Proc. 395, 243(1996)

    CAS  Article  Google Scholar 

  17. 17

    R. J. Molnar, W. Gotz, L. T. Romano and N. M. Johnson, J. Cryst. Growth, 178, 147(1997)

    CAS  Article  Google Scholar 

  18. 18

    R. Zhang and T. F. Kuech, in Proceedings of 1997 Fall meeting of MRS, Boston, Dec 1–5, 1997

    Google Scholar 

  19. 19

    R. Zhang and T. F. Kuech, Appl. Phys. Lett. 72, (1998)

  20. 20

    R. Zhang and T. F. Kuech, accepted by J. Electron. Mater.

  21. 21

    R. Zhang, L. Zhang and T. F. Kuech, unpublished

  22. 22

    R. Zhang, K. Yang, L. H. Qin, B. Shen, H. T. Shi, Y. Shi, S. L. Gu, Y. D. Zheng, Z. C. Huang and J. C. Chen, J. Vac. Sci. Technol. 14, 840(1996)

    CAS  Article  Google Scholar 

  23. 23

    E. Silkowski, Y. K. Yeo, R. L. Hengehold, B. Goldenberg and G. S. Pomrenke, Mat. Res. Soc. Symp. Proc. 422, 69(1996)

    CAS  Article  Google Scholar 

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Zhang, R., Kuech, T.F. Incorporation of Er into GaN by in-situ Doping During Halide Vapor Phase Epitaxy. MRS Online Proceedings Library 512, 327–332 (1998).

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