Spatial characterization of Doped Sic Wafers


Raman spectroscopy has been used to investigate wafers of both 4H-SiC and 6H-SiC. The wafers studied were semi-insulating and n-type (nitrogen) doped with concentrations between 2.1 × 1018 cm−3 and 1.2 × 1019 cm−3. Significant coupling of the A1 longitudinal optical (LO) phonon to the plasmon mode was observed. The position of this peak shows a direct correlation with the carrier concentration. Examination of the Raman spectra from different positions on the wafer yielded a rudimentary spatial map of the carrier concentration. This data is compared with a resistivity map of the wafer. These results suggest that Raman spectroscopy of the LO phonon-plasmon mode can be used as a noninvasive, in situ diagnostic for SiC wafer production and substrate evaluation.

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  1. 1

    W. J. Choyke and G. Pensl, MRS Bulletin 22, 25–29 (1997).

    CAS  Article  Google Scholar 

  2. 2

    R. C. Glass, D. Henshall, V. F. Tsvetkov, and C. H. Carter, MRS Bulletin, 30–35 (1997).

    Google Scholar 

  3. 3

    S. Nakashima and H. Harima, Physica Status Solidi A 162, 37–63 (1997).

    Article  Google Scholar 

  4. 4

    D. W. Feldman, J. H. Parker, Jr., W. J. Choyke, and L. Patrick, Physical Review 170, 698–704 (1968).

    CAS  Article  Google Scholar 

  5. 5

    M. V. Klein, B. N. Ganguly, and P. J. Colwell, Physical Review B 6, 2380–2388 (1972).

    CAS  Article  Google Scholar 

  6. 6

    G. Irmer, V. V. Toporov, B. H. Bairamov, and J. Monecke, Phys. Stat. Sol. 119, 595–603 (1983).

    CAS  Article  Google Scholar 

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Correspondence to J. C. Burton.

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Burton, J.C., Sun, L., Pophristic, M. et al. Spatial characterization of Doped Sic Wafers. MRS Online Proceedings Library 512, 297–301 (1998).

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