Spatial characterization of Doped Sic Wafers

Abstract

Raman spectroscopy has been used to investigate wafers of both 4H-SiC and 6H-SiC. The wafers studied were semi-insulating and n-type (nitrogen) doped with concentrations between 2.1 × 1018 cm−3 and 1.2 × 1019 cm−3. Significant coupling of the A1 longitudinal optical (LO) phonon to the plasmon mode was observed. The position of this peak shows a direct correlation with the carrier concentration. Examination of the Raman spectra from different positions on the wafer yielded a rudimentary spatial map of the carrier concentration. This data is compared with a resistivity map of the wafer. These results suggest that Raman spectroscopy of the LO phonon-plasmon mode can be used as a noninvasive, in situ diagnostic for SiC wafer production and substrate evaluation.

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Correspondence to J. C. Burton.

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Burton, J.C., Sun, L., Pophristic, M. et al. Spatial characterization of Doped Sic Wafers. MRS Online Proceedings Library 512, 297–301 (1998). https://doi.org/10.1557/PROC-512-297

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