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Spatial characterization of Doped Sic Wafers

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Abstract

Raman spectroscopy has been used to investigate wafers of both 4H-SiC and 6H-SiC. The wafers studied were semi-insulating and n-type (nitrogen) doped with concentrations between 2.1 × 1018 cm−3 and 1.2 × 1019 cm−3. Significant coupling of the A1 longitudinal optical (LO) phonon to the plasmon mode was observed. The position of this peak shows a direct correlation with the carrier concentration. Examination of the Raman spectra from different positions on the wafer yielded a rudimentary spatial map of the carrier concentration. This data is compared with a resistivity map of the wafer. These results suggest that Raman spectroscopy of the LO phonon-plasmon mode can be used as a noninvasive, in situ diagnostic for SiC wafer production and substrate evaluation.

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Authors and Affiliations

  1. Chemistry Dept., Rutgers University, Piscataway, NJ, 08854, USA

    J. C. Burton, L. Sun, M. Pophristic, J. Li & F. H. Long

  2. EMCORE Corp., Somerset, NJ, 08873, USA

    Z. C. Feng & I. Ferguson

Authors
  1. J. C. Burton
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  2. L. Sun
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  3. M. Pophristic
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  4. J. Li
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  5. F. H. Long
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  6. Z. C. Feng
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  7. I. Ferguson
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Burton, J.C., Sun, L., Pophristic, M. et al. Spatial characterization of Doped Sic Wafers. MRS Online Proceedings Library 512, 297–301 (1998). https://doi.org/10.1557/PROC-512-297

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  • DOI: https://doi.org/10.1557/PROC-512-297

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