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The Estimation and revision of barrier heights in 4H- SiC and 6H-sic Schottky Diodes

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The barrier heights of various Schottky diodes in n-type 4H-SiC and 6H-SiC is estimated from published data at Si-face and C-face, respectively, employing the LSM (least square method). It is found that the barrier height in SiC Schottky diode is a linear function of metal work function as φB. =a φm + b. The a is about 0.63 ∼ 0.72. The already established analytic expression in [9] is compared with the estimated linear expression and revised by employing the empirical factor, α between the upper and lower boundary of interface state density, DIT. The values of a lie in 1.65 ∼ 32.1.

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Authors and Affiliations

  1. School of Electrical Eng., Seoul Nat’l Univ., 56-1 Shinlim-dong, Kwanak-ku, 151-724, Seoul, Korea

    You-Sang Lee, D. Y. Kim, J. K. Oh, M. K. Han & Y. I. Choi

  2. School of Electronics Eng., Ajou Univ., 5 Wonchun-dong, Suwon, 442-749, Korea

    Y. I. Choi

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  1. You-Sang Lee
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  2. D. Y. Kim
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  3. J. K. Oh
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  4. M. K. Han
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  5. Y. I. Choi
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Lee, YS., Kim, D.Y., Oh, J.K. et al. The Estimation and revision of barrier heights in 4H- SiC and 6H-sic Schottky Diodes. MRS Online Proceedings Library 512, 175–180 (1998). https://doi.org/10.1557/PROC-512-175

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