Temperature Dependence of Breakdown Field in p-π-n GaN Diodes

MRS Online Proceedings Library volume 512, pages15–20(1998)Cite this article

Abstract

We present the results of the study of the electric breakdown in p-π-n GaN diodes. The breakdown is observed at reverse biases above 40 V and is accompanied by the formation of microplasmas. The study shows that the observed breakdown field in GaN (on the order of 1 to 2 MV/cm) increases with the temperature. This feature makes GaN very promising for high power devices and avalanche photodetectors, operating at elevated temperatures.

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Affiliations

  1. APA Optics, Inc., 2950 N. E. 84th Lane, Blaine, MN, 55449, USA

    A. Osinsky & R. Gaska

  2. EMCORE Corporation, 394 Elizabeth Ave., Somerset, NJ, 08873, USA

    A. Osinsky

  3. Department of ECSE, Rensselaer Polytechnic Institute Troy, NY, 12180-3590, USA

    M. S. Shur

Authors
  1. A. Osinsky
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  2. M. S. Shur
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  3. R. Gaska
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Correspondence to A. Osinsky.

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Osinsky, A., Shur, M.S. & Gaska, R. Temperature Dependence of Breakdown Field in p-π-n GaN Diodes. MRS Online Proceedings Library 512, 15–20 (1998). https://doi.org/10.1557/PROC-512-15

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