Temperature Dependence of Breakdown Field in p-π-n GaN Diodes

Abstract

We present the results of the study of the electric breakdown in p-π-n GaN diodes. The breakdown is observed at reverse biases above 40 V and is accompanied by the formation of microplasmas. The study shows that the observed breakdown field in GaN (on the order of 1 to 2 MV/cm) increases with the temperature. This feature makes GaN very promising for high power devices and avalanche photodetectors, operating at elevated temperatures.

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Osinsky, A., Shur, M.S. & Gaska, R. Temperature Dependence of Breakdown Field in p-π-n GaN Diodes. MRS Online Proceedings Library 512, 15–20 (1998). https://doi.org/10.1557/PROC-512-15

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