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Excitonic Enhanced Optical Gain of GaN/AlGaN Quantum Wells With Localized States

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Abstract

We have evaluated the optical gain of GaN/AlGaN quantum well structures with localized states, taking into account the Coulomb interaction. The localized states axe introduced in the well as quantum dot-like subband states. We have used the temperature Green's function formalism to treat the many-body effects and have found a new excitonic enhancement of the optical gain involved the localized states. This enhancement is stronger than the conventional Coulomb enhancement. It might play an important role to reduce the threshold carrier density.

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Acknowledgments

We are grateful to Emeritus Professor A. Yanase of University of Osaka Prefecture for his helpful discussion and providing us with his FLAPW program.

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Authors and Affiliations

  1. Central Research Laboratories, Matsushita Electric Industrial Co., Ltd., 3–4 Hikaridai, Seikacho, Sourakugun, Kyoto 619–02, Japan

    Takeshi Uenoyama

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  1. Takeshi Uenoyama
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Correspondence to Takeshi Uenoyama.

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Uenoyama, T. Excitonic Enhanced Optical Gain of GaN/AlGaN Quantum Wells With Localized States. MRS Online Proceedings Library 482, 818–827 (1997). https://doi.org/10.1557/PROC-482-805

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