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Local Electronic Structure of Defects in GaN From Spatially Resolved Electron Energy-Loss Spectroscopy

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Abstract

The optical properties and their modification by crystal defects of wurtzite GaN are investigated using spatially resolved electron energy-loss spectroscopy (EELS) in a dedicated ultra-high vacuum field emission gun scanning transmission electron microscope. The calculated density of states of the bulk crystal reproduces well the features of the measured spectra. The profound effect of a prismatic stacking fault on the local electronic structure is shown by the spatial variation of the optical properties derived from low-loss spectra. It is found that a defect state at the fault appears to bind 1.5 electrons per atom.

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Acknowledgments

The authors wish to thank Y Xin for the provision and preparation of the GaN specimen which has been grown by CT Foxon and TS Cheng at the University of Nottingham. MKHN gratefully acknowledges financial support by Gatan Inc. and the EPSRC.

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Authors and Affiliations

  1. Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, U.K.

    M. K. H. Natusch, G. A. Botton, R. F. Broom, P. D. Brown, D. M. Tricker & C. J. Humphreys

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  1. M. K. H. Natusch
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  2. G. A. Botton
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  3. R. F. Broom
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  4. P. D. Brown
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  5. D. M. Tricker
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  6. C. J. Humphreys
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Natusch, M.K.H., Botton, G.A., Broom, R.F. et al. Local Electronic Structure of Defects in GaN From Spatially Resolved Electron Energy-Loss Spectroscopy. MRS Online Proceedings Library 482, 784–789 (1997). https://doi.org/10.1557/PROC-482-763

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  • DOI: https://doi.org/10.1557/PROC-482-763

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