Local Electronic Structure of Defects in GaN From Spatially Resolved Electron Energy-Loss Spectroscopy

Abstract

The optical properties and their modification by crystal defects of wurtzite GaN are investigated using spatially resolved electron energy-loss spectroscopy (EELS) in a dedicated ultra-high vacuum field emission gun scanning transmission electron microscope. The calculated density of states of the bulk crystal reproduces well the features of the measured spectra. The profound effect of a prismatic stacking fault on the local electronic structure is shown by the spatial variation of the optical properties derived from low-loss spectra. It is found that a defect state at the fault appears to bind 1.5 electrons per atom.

This is a preview of subscription content, access via your institution.

References

  1. 1.

    D. A. Muller and J. Silcox, Ultramicroscopy 59, p. 195 (1995)

    CAS  Article  Google Scholar 

  2. 2.

    S. J. Pennycook, Contemp Phys 23, p. 371 (1982)

    CAS  Article  Google Scholar 

  3. 3.

    R. F. Egerton, Electron energy-loss spectroscopy in the electron microscope, 2nd ed. (Plenum Press, New York, 1996), pp. 256–264

    Google Scholar 

  4. 4.

    Y. Xin, P. D. Brown, C. J. Humphreys, T. S. Cheng and C. T. Foxon, Appl Phys Lett 70, p. 1308 (1997)

    CAS  Article  Google Scholar 

  5. 5.

    J. Hedman and N. Märtensson, Phys Scr 22, p. 176 (1980)

    CAS  Article  Google Scholar 

  6. 6.

    S. Bloom, G. Harbeke, E. Meier and I. B. Ortenburger, Phys Stat Sol B66, p. 161 (1974)

    Article  Google Scholar 

  7. 7.

    S. Logothetidis, J. Petalas, M. Cardona and T. D. Moustakas, Phys Rev B 50, p. 18017 (1994)

    CAS  Article  Google Scholar 

Download references

Acknowledgments

The authors wish to thank Y Xin for the provision and preparation of the GaN specimen which has been grown by CT Foxon and TS Cheng at the University of Nottingham. MKHN gratefully acknowledges financial support by Gatan Inc. and the EPSRC.

Author information

Affiliations

Authors

Corresponding author

Correspondence to M. K. H. Natusch.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Natusch, M.K.H., Botton, G.A., Broom, R.F. et al. Local Electronic Structure of Defects in GaN From Spatially Resolved Electron Energy-Loss Spectroscopy. MRS Online Proceedings Library 482, 784–789 (1997). https://doi.org/10.1557/PROC-482-763

Download citation