InGaN Quantum Dots Fabricated on AlGaN Surfaces-Growth Mechanism and Optical Properties-

Abstract

We demonstrate photoluminescence from self- assembling InGaN quantum dots (QDs), which are artificially fabricated on AlGaN surfaces via metal- organic chemical vapor deposition. InGaN QDs are successfully fabricated by the growth mode transition from step- flow to three dimensional island formation by using anti-surfactant silicon on AlGaN surface. The diameter and height of the fabricated InGaN QDs are estimated to be ˜10nm and ˜5nm, respectively, by an atomic- force- microscope (AFM). Indium mole fraction of InxGal−x N QDs is controlled from x=˜~0.22 to ˜~0.52 by varying the growth temperature of QDs. Intense photoluminescence is observed even at room temperature from InGaN QDs embedded with the GaN capping layers. In addition, the temperature- dependent energy shift of the photoluminescence peak- energy shows a localization behavior.

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Correspondence to H. Hirayama.

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Hirayama, H., Tanaka, S., Ramvall, P. et al. InGaN Quantum Dots Fabricated on AlGaN Surfaces-Growth Mechanism and Optical Properties-. MRS Online Proceedings Library 482, 760–765 (1997). https://doi.org/10.1557/PROC-482-737

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