Carbon and Hydrogen Induced Yellow Luminescence in Gallium Nitride Grown by Halide Vapor Phase Epitaxy


Yellow luminescence (YL) from GaN was systematically investigated through the intentional introduction of carbon, from propane, and excess H2 during growth by the halide vapor phase epitaxy technique. All GaN films were studied by photoluminescence, X-ray diffraction and Hall measurements. The unintentionally doped GaN showed undetectable or very weak YL signal, while both C-doping and H2 addition resulted in a significant enhancement of YL. The blue- and red-shift of the YL band of the C-doped and ‘H2-grown’ GaN with the increasing temperature indicated that different mechanisms existed in these two cases. The temperature dependence of the integrated intensity of the YL band of both groups implicated that shallow donors, not ‘shallow’ acceptors participated the YL transition and that there were more than one radiative recombination channel within the YL band.

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  1. 1

    S. Nakamura, Mat. Res. Soc. Symp. Proc. 449, 1135(1997)

  2. 2

    S. Strite and H. Morkoc, J. Vac. Sci. Technol. B10, 1237(1992)

    Article  Google Scholar 

  3. 3

    H. Amano, N. Sawaki, I. Akasaki and Y. Toyoda, Appl. Phys. Lett. 48, 353 (1986)

    CAS  Article  Google Scholar 

  4. 4

    R.J. Molnar and T.D. Moustakas, J. Appl. Phys. 76, 4587(1994)

    CAS  Article  Google Scholar 

  5. 5

    T. Ogino and M. Aoki, Japn. J. Appl. Phys. 19, 2395 (1980)

    CAS  Article  Google Scholar 

  6. 6

    F. A. Ponce, D. P. Bour, W. Gotz and P. J. Wright, Appl. Phys. Lett. 68, 57(1996)

    CAS  Article  Google Scholar 

  7. 7

    J. Liu, N.R. Perkins, M.N. Horton, J.M. Redwing, M.A. Tischler and T.F. Kuech, Appl. Phys. Lett. 69, 3519 (1996)

    CAS  Article  Google Scholar 

  8. 8

    T. Suski, P. Perlin, H. Teisseyre, M. Leszczynski, I. Grzegory, J. Jun, M. Bockowski, S. Porowski and T.D. Moustakas, Appl. Phys. Lett. 67, 2188 (1995)

    CAS  Article  Google Scholar 

  9. 9

    J.N. Neugebauer and C.G. Van de Walle, Appl. Phys. Lett. 69, 503 (1996)

    Article  Google Scholar 

  10. 10

    E.R. Glaser, T.A. Kennedy, H.C. Crookham, J.A. Freitas Jr,, M. Asif Khan, D.T. Olson and J.N. Kuznia, Appl. Phys. Lett. 63, 2673 (1993)

    CAS  Article  Google Scholar 

  11. 11

    N.R. Perkins, M.N. Horton, Z.Z. Bandic, T.C. McGill and T.F. Kuech, Mat. Res. Sci. Symp. Proc. 395, 243(1996)

  12. 12

    R.J. Molnar, K.B. Nichols, P. Maki, E.R. Brown and I. Melngailis, Mater. Res. Soc. Symp. Proc., 378, 479 (1995)

  13. 13

    W. Shan, T.J. Schmidt, X.H. Yang, S.J. Hwang, J.J. Song and B. Goldenberg, Appl. Phys. Lett. 66, 985(1995)

    CAS  Article  Google Scholar 

  14. 14

    G.D. Chen, M. Smith, J.Y. Lin, H.X. Jiang, M. Asif Khan and C.J. Sun, Appl. Phys. Lett. 67, 1653(1995)

    CAS  Article  Google Scholar 

  15. 15

    C.C. Klick and J.H. Schulman: Solid State Physics, eds, F. Seitz and D. Turnbull (Academic Press, New York, 1957), Vol.5, p99

    Google Scholar 

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The authors would like to acknowledge the financial support of the Navel Research Laboratory, the DARPA URI visible light emitters, and the facilities support of the NSF Materials Research Science and Engineering Center on Nanostructured Materials and Interfaces.

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Correspondence to R. Zhang.

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Zhang, R., Kuech, T.F. Carbon and Hydrogen Induced Yellow Luminescence in Gallium Nitride Grown by Halide Vapor Phase Epitaxy. MRS Online Proceedings Library 482, 732–737 (1997).

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