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Cubic InN Inclusions as the Cause for the Unusually Weak Pressure Shift of the Luminescence in InGaN

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Abstract

We propose a new approach to explain the unusually low pressure coefficients of the luminescence peaks observed in single-quantum-well InGaN-based light emitting diodes manufactured by Nichia Chemical Industries. In view of the most recent first principles band structure calculations for InN under hydrostatic pressure, we find that it is possible to reproduce the measured low (12–16meV/GPa) pressure coefficients of the luminescence by assuming the formation of zincblende InN inclusions in the InGaN quantum well layers. These cubic inclusions, surrounded by the usual wurtzite material, should act like quantum dots giving rise to enhanced electron localization. Obtained this way, the pressure shift of the luminescence peaks in blue and green InGaN-based emitters should be close to 14meV/GPa, in good agreement with our experimental results. This explanation of the observed low pressure coefficients in these devices is consistent with recent independent evidence for InN inclusions in InGaN epilayers.

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Authors and Affiliations

  1. Lawrence Berkeley Laboratory, University of California at Berkeley, Berkeley, CA, 94720, USA

    Piotr Perlin

  2. Physics Department SUNY at Buffalo, USA

    Bernard A. Weinstein & Valentin Iota

  3. Institute of Physics and Astronomy, Aarhus University, Denmark

    Niels E. Christensen

  4. High Pressure Research Center, Polish Academy of Sciences, Warszawa, Poland

    Iza Gorczyca, Tadeusz Suski & Przemek Wisniewski

  5. Center for High Technology Materials, University of New Mexico, Albuquerque, USA

    M. Osinski & P.G. Eliseev

  6. High Pressure Research Center, Warsaw, Poland

    Piotr Perlin

Authors
  1. Piotr Perlin
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  2. Bernard A. Weinstein
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  3. Niels E. Christensen
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  4. Iza Gorczyca
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  5. Valentin Iota
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  6. Tadeusz Suski
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  7. Przemek Wisniewski
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  8. M. Osinski
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  9. P.G. Eliseev
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Correspondence to Piotr Perlin.

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Perlin, P., Weinstein, B.A., Christensen, N.E. et al. Cubic InN Inclusions as the Cause for the Unusually Weak Pressure Shift of the Luminescence in InGaN. MRS Online Proceedings Library 482, 720–725 (1997). https://doi.org/10.1557/PROC-482-697

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  • DOI: https://doi.org/10.1557/PROC-482-697

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