Well Thickness and Doping Effects, and Room Temperature Emission Mechanisms in InGaN/GaN and GaN/AlGaN Multiple Quantum Wells

Abstract

Effects of well thickness and Si-doping on the photoluminescence (PL) emission properties of GaN/AlxGa1-xN (x ~ 0.07) and InxGa1-xN/GaN (x ~ 0.15–0.2) multiple quantum wells (MQWs) grown both by MOCVD and reactive MBE have been studied. The room temperature emission mechanisms have also been addressed.

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Acknowledgments

The research at Kansas State University is supported by ARO and BMDO/ONR (monitored by Dr. John Zavada and Dr. Yoon Soo Park), DOE (96ER45604/A000), and NSF (DMR9528226). The research at the University of Illinois is supported by ONR, AFOSR and BMDO and monitored by Max Yoder, Yoon Soo Park, C. Wood, G. L. Witt, and K. P. Wu.

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Correspondence to K. C. Zeng.

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Zeng, K.C., Smith, M., Lin, J.Y. et al. Well Thickness and Doping Effects, and Room Temperature Emission Mechanisms in InGaN/GaN and GaN/AlGaN Multiple Quantum Wells. MRS Online Proceedings Library 482, 678–683 (1997). https://doi.org/10.1557/PROC-482-643

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