Polycrystalline, wurtzitic indium nitride was synthesized by saturating indium metal with atomic nitrogen from a microwave plasma source. Plasma synthesis avoids the high equilibrium pressures required when molecular nitrogen is used as the nitrogen source. Two types of growth were observed: 1) small amounts of indium nitride crystallized from the melt during cooling and 2) hexagonal platelets formed adjacent to the In metal source on the crucible sides. The mechanism of this latter growth is not established, but may involve transport of indium as a liquid film. The crystals were characterized by electron diffraction, X-ray diffraction, elemental analysis, scanning electron microscopy, and Raman spectroscopy. Lattice parameter and Raman active phonon modes are reported and compared with calculations based on the full-potential linear muffin-tin orbital method (FP-LMTO).
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
S.M. Bedair, in Gallium Nitride (GaN) I, edited by J.I. Pankove and T.D. Moustakas (Semiconductors and Semimetals Series Vol.50, Academic Press, San Diego, 1998) p. 128 - and references therein.
W. A. Harrison, Electronic Structure and the Properties of Solids, (W.H. Freeman and Co., San Francisco, 1980), p. 176.
S. Nakamura, T. Mukai, and M. Senoh, J. Appl. Phys. 76, 8189 (1994).
S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, Jpn. J. Appl. Phys. 34, L797 (1995).
I. Grzegory, J. Jun, S. Krukowski, P. Perlin, and S. Porowski, Jpn. J. Appl. Phys. 32, Suppl. 32-1, 343 (1993).
A. Argoitia, C.C. Hayman, J.C. Angus, L. Wang, J.S. Dyck, and K. Kash, Appl. Phys. Lett. 70, 179 (1997).
A. Argoitia, C.C. Hayman, J.C. Angus, L. Wang, J.S. Dyck, and K. Kash in II-V Nitrides, edited by F.A. Ponce, T.D. Moustakas, I. Akasaki, and B.A. Monemar (Mater. Res. Soc. Proc. 449, Pittsburgh, PA, 1996) pp. 47–52.
J.C. Angus, A. Argoitia, C.C. Hayman, L. Wang, J.S. Dyck, and K. Kash in Gallium Nitride and Related Materials II, edited by C.R. Abernathy, H. Amano, J.C. Zolper (Mater. Res. Soc. Proc. 468, Pittsburgh, PA, 1997).
S. Krukowski, A. Witek, J. Adamczyk, J. Jun, M. Bockowski, I Grzegory, B. Lucznik, G. Nowak, M. Wroblewski, A. Presz, S. Gierlotka, S. Stelmach, B. Palosz, and S. Porowski, J. Phys. Chem. Solids, (to be published).
M. Methfessel, Phys. Rev. B 38, 1537 (1988).
K. Kim, W.R.L. Lambrecht, and B. Segall, Phys. Rev. B53, 16310 (1996); Phys. Rev. B 56, 7018 (1997).
T.L. Tansley, Properties of III-V Nitrides, edited by J.H. Edgar, EMIS Datareviews Series, No. 11, INSPEC, (Institution of Electrical Engineers, London, UK, 1994) p. 36.
K. Osamura, S. Naka, and Y. Murakami, J. Appl. Phys. 46, 3432 (1975).
T. Inushima, T. Yaguchi, A. Nagase, A. Iso, and T. Shiraishi in Silicon Carbide and Related Materials 1995 edited by S. Nakashima, H. Matsunami, S. Yoshida, and H. Harima (Inst. Phys. Conf. Ser. 142, Bristol and Philadelphia, 1996), p. 971
H. Kwon, Y. Lee, O. Miki, H. Yamano, and A. Yoshida, Appl. Phys. Lett. 69, 937 (1996).
We acknowledge the generous support of the Ohio Board of Regents, the National Science Foundation, and the Office of Naval Research.
About this article
Cite this article
Dyck, J.S., Kash, K., Kim, K. et al. Characterization of Bulk, Polycrystalline Indium Nitride Grown At Sub-Atmospheric Pressures. MRS Online Proceedings Library 482, 593–598 (1997). https://doi.org/10.1557/PROC-482-549