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Comparative Analysis of Strain and Stress in MBE and MOCVD grown GaN thin films on sapphire

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Abstract

In this study, the causes of biaxial and hydrostatic stress components in epitaxially grown thin GaN films on sapphire are analyzed. It is observed that growth by Molecular Beam Epitaxy (MBE) and by Metal Organic Chemical Vapor Deposition (MOCVD) are governed by very similar physical principles. Differences in the absolute stress values are mainly due to the difference in growth temperature. It is argued that in the case of MOCVD growth the onset of plasticity for higher growth temperatures is responsible for a larger stress relaxation in the buffer layer. It is further found that either process can result in highly off-stoichiometric GaN layers, as manifested by the large variations in the a and c lattice parameters caused by intrinsic point defects.

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Acknowledgments

This work has been supported by the ONR as part of the BMDO GaN Microwave Power Amplifier project under contract No. N00014-96-1-0901. Also, the usage of the photolumines-cence setup at the Lawrence Berkeley National Laboratories, Materials Sciences Division, is gratefully acknowledged.

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Authors and Affiliations

  1. Department of Materials Science, University of California at Berkeley, Berkeley, CA, 94720, USA

    Sudhir G.S, Dorina Corlatan, Yonah Cho, Viihwan Kim, Ralf Klockenbrink, Sergei Rouvimov, Zuzanna Liliental-Weber, Christian Kisielowski, Michael Rubin & Eicke R. Weber

  2. Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA

    Sudhir G.S, Dorina Corlatan, Yonah Cho, Viihwan Kim, Ralf Klockenbrink, Sergei Rouvimov, Zuzanna Liliental-Weber, Christian Kisielowski, Michael Rubin & Eicke R. Weber

  3. Rockwell International Science Center, Thousand Oaks, CA, 91360, USA

    Brian McDermott, R. Pittman & Edward R. Gertner

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  1. Sudhir G.S
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  2. Dorina Corlatan
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  3. Yonah Cho
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  6. Sergei Rouvimov
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  7. Zuzanna Liliental-Weber
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  8. Christian Kisielowski
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  9. Michael Rubin
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  10. Eicke R. Weber
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  11. Brian McDermott
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  13. Edward R. Gertner
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G.S, S., Corlatan, D., Cho, Y. et al. Comparative Analysis of Strain and Stress in MBE and MOCVD grown GaN thin films on sapphire. MRS Online Proceedings Library 482, 505–510 (1997). https://doi.org/10.1557/PROC-482-447

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  • DOI: https://doi.org/10.1557/PROC-482-447

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