Organometallic Chemical Vapor Deposition of Group-III Nitride Thin Films using Single Source Precursors

MRS Online Proceedings Library volume 482, pages139–144(1997)Cite this article

Abstract

The OMCVD of AIN, GaN and InN thin films using the novel single source precursors (N3)2Ga[(CH2)3NMe2] (1), (N3)In[(CH2)3NMe2]2(2) and (N3)Al(CH2)3NMe2]2(3) is reported. The compounds are non-pyrophoric. Compound 2 is air stable. No additional N-sources were used for the growth of the nitrides. We achieved epitaxial (A1N, GaN) or polycrystalline (InN) growth at least 200°C below the decomposition temperature of the respective nitride. Some aspects of the reactivity of the precursors with ammonia and the resulting influence on the deposition process were investigated.

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  1. Lehrstuhl für Anorganische Chemie II, Ruhr Universität Bochum, D-44780, Bochum, Germany

    Roland A. Fischer & Wolfram Rogge

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  1. Roland A. Fischer
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  2. Wolfram Rogge
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Correspondence to Roland A. Fischer.

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Fischer, R.A., Rogge, W. Organometallic Chemical Vapor Deposition of Group-III Nitride Thin Films using Single Source Precursors. MRS Online Proceedings Library 482, 139–144 (1997). https://doi.org/10.1557/PROC-482-39

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