Organometallic Chemical Vapor Deposition of Group-III Nitride Thin Films using Single Source Precursors


The OMCVD of AIN, GaN and InN thin films using the novel single source precursors (N3)2Ga[(CH2)3NMe2] (1), (N3)In[(CH2)3NMe2]2(2) and (N3)Al(CH2)3NMe2]2(3) is reported. The compounds are non-pyrophoric. Compound 2 is air stable. No additional N-sources were used for the growth of the nitrides. We achieved epitaxial (A1N, GaN) or polycrystalline (InN) growth at least 200°C below the decomposition temperature of the respective nitride. Some aspects of the reactivity of the precursors with ammonia and the resulting influence on the deposition process were investigated.

This is a preview of subscription content, access via your institution.


  1. [1]a)

    Detchprohm T.; Hiramatsu K.; Sawaki N.; Akasaki I. J. Cryst. Growth, 137, (1994) 171.

    Google Scholar 

  2. b)

    S. Nakamura, Jap. J. Appl. Phys. 10A, (1991) L1705.

    Article  Google Scholar 

  3. [2]

    K. Tsubouchi, N. Mikoshiba, IEEE Transactions on Sonics and Ultrasonics, SU-32, (1985) 634.

    Article  Google Scholar 

  4. [3]

    Q. Guo, O. Kato, A. Yoshida, J. Appl. Phys. 73, (1993) 7969

    CAS  Article  Google Scholar 

  5. [4]a)

    C. R. Eddy, T. D. Moustakas, J. Appl. Phys. 73, (1993) 448.

    CAS  Article  Google Scholar 

  6. b)

    M. J. Paisley, Z. Sitar, J. B. Posthill, R. F. Davis, J. Vac. Sci. Technol. A7, (1989) 701.

    Article  Google Scholar 

  7. [5]

    K.-L. Ho, K. F. Jensen, J.-W. Hwang, W. L. Gladfelter, F. Evans, J Cryst. Growth, 107, (1991) 376.

    CAS  Article  Google Scholar 

  8. [6]

    D. A. Neumayer, A. H. Cowley, A. Decken, R. A. Jones, V. Lakhotia, J. G. Ekerdt, J. Am. Chem. Soc. 117, (1995) 5893.

    CAS  Article  Google Scholar 

  9. [7]

    E. Wiberg, H. Michaud, Z. Naturforsch., 9b, (1954) 502.

    Google Scholar 

  10. [8]

    A. Miehr, M. R. Mattner, R. A. Fischer, Organometallics 15, (1996) 2053.

    CAS  Article  Google Scholar 

  11. [9]

    R. A. Fischer, M. Kleine, M. Stuke, O. Lehmann, Chem. Mater. 7, (1995) 1863.

  12. [10]

    A. H. Cowley, F. P. Gabbai, F. Olbrich, S. Corbelin, R. J. Lagow, J. Organomet. Chem. 487, (1995) C5.

    CAS  Article  Google Scholar 

  13. [11]a)

    H. Schumann, U. Hartmann, W. Wassermann, O. Just, A. Dietrich, L. Pohl, M. Hostalek, M. Lokai, Chem. Ber. 124, (1991) 1113.

    CAS  Article  Google Scholar 

  14. b)

    R. A. Fischer, W.Scherer, M. Kleine, Angew. Chem. 105, (1993) 778; Angew. Chem. Int. Ed. Engl. 32, (1993) 774.

    CAS  Article  Google Scholar 

  15. [12]

    A. Miehr, Dissertation, Technische Universit?t M?nchen, 1996.

    Google Scholar 

  16. [13]a)

    T. F. Kuech, D. J. Wolford, E. Veuhoff, V. Deline, P. M. Mooney, R. Potemski, J. Appl. Phys. 62, (1987) 632.

    CAS  Article  Google Scholar 

  17. b)

    A. salvador, G. Liu, W. Kim, ?. Aktas, A. Botchkarev, H. Morkoc, Appl. Phys. Lett. 67, (1995) 3322.

    CAS  Article  Google Scholar 

Download references

Author information



Corresponding author

Correspondence to Roland A. Fischer.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Fischer, R.A., Rogge, W. Organometallic Chemical Vapor Deposition of Group-III Nitride Thin Films using Single Source Precursors. MRS Online Proceedings Library 482, 139–144 (1997).

Download citation