GaN layers were grown by MOCVD on Silicon on Insulator (SOI) substrates in an effort to improve the material quality compared to more traditionally employed sapphire substrates. Their photoluminescence properties are reported and found to exhibit an intense and relatively large PL band around 3.47eV at low temperature (7K). This is about 10meV lower than the PL energy of samples grown on sapphire substrates and suggests the presence of lower strain in the layers which is expected for compliant growth on SOI substrates. The shape of the main PL peak appears to indicate that Silicon diffusion takes place from the substrate during growth. The behavior of the PL spectra is studied as a function of temperature. The GaN films show good overall electrical properties with Hall mobilities at room temperature in the range of 150 to 300cm2/Vs and background carrier concentration from 2.9 to 3.9×1019cm−3.The promising optical and electronic features of these layers could be of great interest for the development of high quality optical and electronic devices.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
S. Nakamura, Proceedings of the International Conference on Nitride Semiconductors, Tokushima, Japan (1997).
A. Kuramata, Proceedings of the International Conference on Nitride Semiconductors, Tokushima, Japan (1997).
D. Pavlidis, J. Singh, Y. Park, A. Eisenbach, J. Cao, Office of Naval Research Report (N00014- 92-J-1552), July 1996.
J. Cao, D. Pavlidis, Y. Park, J. Singh, A. Eisenbach, 8th Biennial Workshop on Organcmetallic Vapor Phase Epitaxy, Dana Point, CA, April 13 - 17, 1997, Paper#84.
J. Cao, D. Pavlidis, A. Eisenbach, A. Philippe, C. Bru-Chevallier, G. Guillot, Appl. Phys. Lett., to be published Dec. 97.
A.J. Steckl, J. Devrajan, C. Tran, R.A. Strall, Appl. Phys. Lett. 69, 2264-2266 (1996)
B. Monemar, Phys. Rev. B10, 676-681 (1974).
A.V. Andrianov, D.E. Lacklison, J.W. Orton, D.J. Dewsnip, S.E. Hooper, C.T. Foxon, Semicond. Sci. Technol. 11, 366-371 (1996).
N. Grandjean, J. Massies, M. Leroux, Appl. Phys. Lett. 69, 2071 (1996)
S. Fischer, G. Steude, D.M. Hofman, F. Kurth, F. Anders, M. Topf, B.K. Meyer, F. Bertram, M. Schmidt, J. Christen, L. Eckey, J. Hoist, A. Hoffmann, Proceedings of the International Conference on Nitride Semiconductors, Tokushima, Japan (1997).
K.P. Korona, A. Wysmotek, K. Pakula, R. Stepniewski, J.M. Baranowski, I. Grzegory, B. Lucznik, M. Wroblewski, S. Porowski, Appl. Phys. Lett. 69, 788-790 (1996).
See for instance: M. Tchounkeu, O. Briot, B. Gil, J.P. Alexis, R.L. Aulombard, J. Appl. Phys. 80, 5352-5360 (1996).
B. Gil, O. Briot, R.L. Aulombard, Phys. Rev. B 52, 17028-17031 (1995).
A. Eisenbach, D. Pavlidis, A. Philippe, C. Bru-Chevallier, C. Dubois, 24th International Symposium on Compound Semiconductors, Coronado, CA, September 8 - 11, 1997, Paper TuE3.
E.F. Schubert, I.D. Goepfert, W. Grieshaber, J.M. Redwing, Appl. Phys. Lett 71, 921-923 (1997).
The authors are grateful to C. Dubois (LPM-INSA Lyon) for SIMS measurements. This work is supported by ONR (N00014-92-J-1552) and NSF/CNRS (JNT-9217513).
About this article
Cite this article
Philippe, A., Bru-Chevalller, C., Guillot, G. et al. Photoluminescence Characteristics of GaN Layers Grown on SOI Substrates and Relation to Material Properties. MRS Online Proceedings Library 482, 376–381 (1997). https://doi.org/10.1557/PROC-482-307