Selective Area Growth of GaN by MOVPE and HVPE

Abstract

Recent successful results on the selective area growth (SAG) of GaN that has been done by MOVPE and HVPE are shown. The SAG were carried out on MOVPE-grown GaN (0001) / sapphire substrates with lined or dotted SiO2 masks. Sub-micron GaN dot and line structures are fabricated by the SAG in MOVPE, so that smoothly overgrown GaN layers are successfully realized using the epitaxially lateral overgrowth (ELO) technique. The ELO structures are confirmed to be good quality GaN single crystal with a smooth surface, no grain boundaries, and low-dislocation densities. In addition, thick GaN bulk single crystals without any cracks are grown by the SAG in HVPE. Crystalline and optical properties of the GaN bulk are much improved. The reduction in the thermal strain due to the growth on the limited area as well as the ELO are found to be effective to reduce crystalline defects of the GaN bulk single crystals.

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Acknowledgments

This work was partly supported by JSPS Research for the Future Program in the Areas of Atomic-Scale Surface and Interface Dynamics.

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Correspondence to K. Hiramatsu.

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Hiramatsu, K., Matsushima, H., Shibata, T. et al. Selective Area Growth of GaN by MOVPE and HVPE. MRS Online Proceedings Library 482, 334–345 (1997). https://doi.org/10.1557/PROC-482-257

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