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Experimental Study of Sputter Deposited Contacts to Gallium Nitride

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Abstract

A variety of metal contacts to n-GaN is investigated, including Al, Au, Ce, Ti, Cr, Mg, Sb, W, and Mo, which were deposited using DC magnetron plasma sputtering onto MBE grown GaN. The contacts were characterized by current-voltage analysis and contact resistances were measured by the circular geometry transmission line method. The effects on contact resistance and Schottky barrier properties by surface sputtering treatments, GaN doping, and post-deposition annealing are reported.

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References

  1. L. F. Lester, J. M. Brown, J. C. Ramer, L. Zhang, S. D. Hersee and J. C. Zolper, Appl. Phys. Lett. 69, 2737 (1996).

    Article  CAS  Google Scholar 

  2. Z. Fan, S. N. Mohammad. W. Kim, Ö. Aktas, A. E. Botchkarev, K. Suzue, H. Morkog, K. Duxstad and E. E. Haller, J. Electron. Mater. 25, 1703 (1996).

    Article  CAS  Google Scholar 

  3. J. Burm, K. Chu, W. A. Davis, W. J. Schaff, L. F. Eastman and T. J. Eustis, Appl. Phys. Lett. 70, 464 (1997).

    Article  CAS  Google Scholar 

  4. S. Nakamura, M. Senoh, S. Nagahama, M. Iwara, T. Yamada, T. Marsushita, H. Kiyoku and Y. Sugimoto, Jpn. J. Appl. Phys. 35, L74 (1996).

    Article  CAS  Google Scholar 

  5. B. P. Luther, S. E. Mohney, T. N. Jackson, M. Asif Khan, Q. Chen and J. W. Yang, Appl. Phys. Lett 70, 57 (1997).

    Article  CAS  Google Scholar 

  6. M. E. Lin, Z. Ma, F. Y. Huang, Z. F. Fan, L. H. Allen and H. Morkog, Appl. Phys. Lett. 64, 1003 (1994).

    Article  CAS  Google Scholar 

  7. G. S. Marlow and M. B. Das, Solid-State Electron. 25(2), 91 (1982).

    Article  CAS  Google Scholar 

  8. G. K. Reeves, Solid-State Electron. 23, 487 (1980).

    Article  CAS  Google Scholar 

  9. J. S. Chan, N. W. Cheung, L. Schloss, E. Jones, W. S. Wong, N. Newman, X. Liu, E. R. Weber, A. Gassman and M. D. Rubin, Appl. Phys. Lett. 68 2702 (1996).

    Article  CAS  Google Scholar 

  10. H. Ishikawa, S. Kobayashi, Y. Koide, S. Yamasaki, S. Nagai, J. Umezaki, M. Koike and M. Murakami, J. Appl. Phys. 81 (3), 1315 (1997).

    Article  Google Scholar 

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Acknowledgments

This work was supported by DARPA and monitored by the ONR under Grant No. N00014-92-J-1845.

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Authors and Affiliations

  1. Watson Laboratories of Applied Physics 128-95, California Institute Of Technology, Pasadena, California, 91125, USA

    E. C. Piquette, Z. Z. Bandić & T. C. McGill

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  1. E. C. Piquette
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  2. Z. Z. Bandić
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  3. T. C. McGill
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Piquette, E.C., Bandić, Z.Z. & McGill, T.C. Experimental Study of Sputter Deposited Contacts to Gallium Nitride. MRS Online Proceedings Library 482, 1068–1073 (1997). https://doi.org/10.1557/PROC-482-1089

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