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Experimental Study of Sputter Deposited Contacts to Gallium Nitride

MRS Online Proceedings Library volume 482, pages1068–1073(1997)Cite this article

Abstract

A variety of metal contacts to n-GaN is investigated, including Al, Au, Ce, Ti, Cr, Mg, Sb, W, and Mo, which were deposited using DC magnetron plasma sputtering onto MBE grown GaN. The contacts were characterized by current-voltage analysis and contact resistances were measured by the circular geometry transmission line method. The effects on contact resistance and Schottky barrier properties by surface sputtering treatments, GaN doping, and post-deposition annealing are reported.

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Acknowledgments

This work was supported by DARPA and monitored by the ONR under Grant No. N00014-92-J-1845.

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Affiliations

  1. Watson Laboratories of Applied Physics 128-95, California Institute Of Technology, Pasadena, California, 91125, USA

    E. C. Piquette, Z. Z. Bandić & T. C. McGill

Authors
  1. E. C. Piquette
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  2. Z. Z. Bandić
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  3. T. C. McGill
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Correspondence to E. C. Piquette.

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Piquette, E.C., Bandić, Z.Z. & McGill, T.C. Experimental Study of Sputter Deposited Contacts to Gallium Nitride. MRS Online Proceedings Library 482, 1068–1073 (1997). https://doi.org/10.1557/PROC-482-1089

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