Abstract
A gradual change in thermal oxide surface state from hydrophilic to hydrophobic was observed with time -delay in a clean room environment. Surface quality and reflectivity for the Al/Ti metal layers showed a strong dependency on the oxide surface state. From the hydrophilic oxide substrate, a lower (002) Ti preferred orientation was obtained than from hydrophobic ones. This resulted in a degraded (111) Al preferred orientation and rough metal surface. The RF-etch process increased the smoothness and hydrophobic surface property for the inter -metal dielectric (IMD) oxides, and therefore greatly improved Al/Ti surface quality. When conventional CMOS double layer metal interconnection process is performed, metal inter-line bridge yield was strongly affected by the surface state of substrate oxides.
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References
K. Hattori, M. Hori, and M. Aoyama, J. Electrochem. Soc., 141, p.5 1 (1994)
M. Kobayashi, and J. Kanamori, Proc. 11th. Symp. Dry Process, p. 51 (1989)
N. Kristensen, F. Ericson, and J. Schweitz, J. Appl. Phys., 69, p.2097 (1991)
E.G. Colgan, S. Greco, N. Gerco, and J. F. White, Proc. IEEE VMIC conference, p. 284 (1994)
E. Mori, J.D. Dowdy, and L.W. Shieve, Microcontam., 10, p.35 (1992)
M. Biberger, M. Rumer, and G. Tkach, Symp. 96 Semicon Korea (1996)
D.P. Tracy, D.B. Knorr, and K.P. Rodbell, J. Appl. Phys., 76, p.2671 (1994)
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Kim, SD., Shin, CS., Kwak, NJ. et al. Effects of the Underlayer Surface State on the Interconnecting Aluminum Film Properties. MRS Online Proceedings Library 477, 439–444 (1997). https://doi.org/10.1557/PROC-477-439
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DOI: https://doi.org/10.1557/PROC-477-439