Contactless Electroreflectance Study of InxGa1-xAs/InP Multiple Quantum Well Structures Including the Observation of Surface/Interface Electric Fields

Abstract

Contactless electroreflectance measurements at 300 K were performed on two InxGal-xAs/InP ]x = 0.53 (lattice-matched) and 0.75] samples containing three quantum wells (QWs) grown by gas-source molecular beam epitaxy. The spectra consisted of two excitonic transitions (le-l hh and le-l lh), corresponding to the fundamental conduction to heavy (h)- and light(l)- hole transitions, respectively, in the QW portion and a complicated Franz-Keldysh oscillation (FKO) pattern originating in the InP regions. Comparison between the experimental energies of le-l hh/le-llh and a theoretical envelope function calculation (including the effect of strain) made it possible to evaluate the conduction band offset parameters Qc =0.34+0.03 and 0.57+0.03 for x = 0.53 and 0.75, respectively. The InP related FKO beat patterns were analyzed by a Fourier transform method. It was found that the FKO spectra were due to the simultaneous contribution of at least three different fields (106 kV/cm, 36 kV/cm, and 23 kV/cm), which originate in the various interfaces, i.e., substrate/buffer, cap layer/surface, and buffer/QW structure. Identification of the different fields has been accomplished by comparison of the Fourier-transformed spectra before and after sulfur passivation of the structure surface.

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References

  1. 1.

    B. B. Elenkrig, D. A. Thompson, J. G. Simmons, D.M. Bruce, Y. Si, J. Zhao, J.D. Evans, and I.M. Templeton, Appl. Phys. Lett. 65, 1239 (1994).

    CAS  Article  Google Scholar 

  2. 2.

    H. Temkin, D. Gershoni, and M. B. Panish, in Semiconductors and Semimetals, 40, ed. A.C. Gossard (Academic Press, New York, 1994) p. 337.

    CAS  Article  Google Scholar 

  3. 3.

    J. Z. Wan, D. A. Thompson, and J. G. Simmons, Nucl. Inst. & Methods in Phys. Res. B 106, 461 (1995).

    CAS  Article  Google Scholar 

  4. 4.

    D. Gershoni, H. Temkin, J. M. Vandenberg, S. N. G. Chu, R. A. Hamm, and M. B. Panish, Phys. Rev. Lett. 60, 448 (1988).

    CAS  Article  Google Scholar 

  5. 5.

    See, for example, M. Missous, in Properties of Aluminum Gallium Arsenide, ed. by S. Adachi, (INSPEC, London, 1993) p. 73.

  6. 6.

    F. H. Pollak, and H. Shen, Mater. Sci. Eng. R10, 275 (1993) and reference therein.

    CAS  Google Scholar 

  7. 7.

    F. H. Pollak, in Handbook on Semiconductors Vol. 2, Optical Properties of Semiconductors, ed. M. Balkanski (North Holland, Amsterdam, 1994) p.527.

  8. 8.

    O.J. Glembocki, and B.V. Shanabrook, in Semiconductors and Semimetals, Vol. 36 ed. D.G. Seiler, and C.L. Littler, (Academic, New York, 1992) p. 221 and references therein.

  9. 9.

    H. Shen, and M. Dutta, J. Appl. Phys. 78, 2151 (1995).

    CAS  Article  Google Scholar 

  10. 10.

    G. Bastard, and J. A. Brum, IEEE J. Quantum Electron., QE-22, 1625 (1986).

    Article  Google Scholar 

  11. 11.

    S. H. Pan, H. Shen, Z. Hang, F. H. Pollak, W. Zhuang, Q. Xu, A. P. Roth, R. Masut, C. LeCelle, and D. Morris, Phys. Rev., B 38, 3375 (1988).

    CAS  Article  Google Scholar 

  12. 12.

    V. Alperovich, A. Jaroshevich, H. Scheibler, and A. Terekhov, Solid State Electron., 37, 657 (1994).

    CAS  Article  Google Scholar 

  13. 13.

    R. Holm, O. Glembocki, and J. Tuchman, Mater. Res. Soc. Symp. Proc., 406, 247 (1996).

    CAS  Article  Google Scholar 

  14. 14.

    R. Iyer, R.R. Chang, A. Dubey, and D.L. Lile, J. Vac. Sci. Technol. B6, 1174 (1988).

    Article  Google Scholar 

  15. 15.

    D. Wang, and C. Chen, Appl. Phys. Lett., 67 (14), 2069 (1995).

    CAS  Article  Google Scholar 

  16. 16.

    D. Aspnes, and A. Studna, Phys. Rev. B, 7, 4605 (1973).

    CAS  Article  Google Scholar 

  17. 17.

    Numerical Data and Functional Relationships in Science and Technology, ed. by O. Madelung, M. Schulz, and H. Weiss, Landolt-Bornstein, New Series, Group III, Vol. 17 (Springer, New York, 1982).

  18. 18.

    M.S. Hybertsen, Appl. Phys. Lett., 58, 1759 (1991).

    CAS  Article  Google Scholar 

  19. 19.

    C. Orme, M. D. Johnson, J. L. Sudijono, K. T. Leung, and B. G. Orr, Appl. Phys. Lett., 64, 860 (1994).

    CAS  Article  Google Scholar 

  20. 20.

    M.L. Gray, and F.H. Pollak, J. Appl. Phys., 74, 3426(1993).

    CAS  Article  Google Scholar 

  21. 21.

    A. Ismail, A. Ben Brahim, L. Lassabatere, and I. Lindau, J. Appl. Phys., 59, 485 (1986).

    CAS  Article  Google Scholar 

  22. 22.

    W. Zhou, M. Dutta, H. Shen, and J. Pamulapati, J. Appl. Phys., 73, 1266 (1993).

    CAS  Article  Google Scholar 

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Correspondence to L. V. Malikova.

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Malikova, L.V., Wan, J.Z., Pollak, F.H. et al. Contactless Electroreflectance Study of InxGa1-xAs/InP Multiple Quantum Well Structures Including the Observation of Surface/Interface Electric Fields. MRS Online Proceedings Library 448, 481–486 (1996). https://doi.org/10.1557/PROC-448-481

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