In/n-In0.46Ga0.54P Schottky diode was fabricated by thermal evaporation of In on chemically etched surface of In0.45Ga0.54P:Si epitaxial layer grown on highly doped n type GaAs. The In metal formed a high quality rectifying contact to In0.46Ga0.54P:Si with a rectification ratio of 500. The direct current-voltage/temperature (I-V/T) characteristics were non-ideal with the values of the ideality factor (n) between 1.26-1.78 for 400>T>260 K. The forward I-V data strongly indicated that the current was controlled by the generation-recombination (GR) and thermionic emission (TE) mechanisms for temperature in the range 260-400 K. From the temperature variation of the TE reverse saturation current, the values of (0.75±0.05)V and the (4.5±0.5)×10-5 Acm-2K-2 for the zero bias zero temperature barrier height (φoo) and modified effective Richardson constant were obtained. The 1 MHz capacitance-voltage (C-V) data for 260 K < T < 400 K was analyzed in terms of the C-2-V relation including the effect of interface layer to obtain more realistic values of the barrier height (φbo). The temperature dependence of φbo was described the relation φbo =(0.86±10.03) - (8.4±0.7)×l0-4T. The values of φoo, obtained by the I-V and C-V techniques agreed well.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
S. Loualiche, A. Ginudi Le Corre, D. Lecroisnier, C. Vaudry, L. Henry and C. Guillemot, EEEE Electron Device Letters, EDL-11, 153 (1990).
Y. J. Chan, D. Pavlidis, M. Razeghi, and F. Omnes, IEEE Trans. Electron Devices ED-37, 2141 (1990).
M. Ishikawa, Y. Ohba, H. Sugawara, M. Yamamoto, and T. Nakanisi, Appl. Phys. Lett. 48, 207 (1986).
T. Kobayashi, K. Taira, F. Nakamura and Kawai, J. Appl. Phys. 65, 4898 (1989).
E. Y. Chang, Y.-L. Lai, K.-C. Lin,and C.-Y. Chang, J. Appl. Phys 74, 5622 (1993).
S. D. Kwon, Ho Ki Kwon, B.-D Choe, H. Lim and J. Y. Lee, J. Appl. Phys. 78, 2482 (1995).
S. M. Sze, Physics of Semiconductor Devices, 2nd Edn. (Wiley, New York, 1981) Chap. 5.
A. Singh and N. Marcano, Mater. Res. Soc. Symp. Proc. 378, 829 (1995).
A. Singh, and L. Velázques, in Surf. Sci. Vac, and their Appl., edited by I. Hernández-Calderón, and R. Asomoza (AIP Conf Proc. 378, AIP Press, New York, 1996) p. 387.
K. Hattori, M. Yuito and T. Amakusa, Phys. Status Solidi, A73, 157 (1982).
E. H Rhoderick and R. H. Williams Metal-Semiconductor Contacts, 2nd Edn. Clarendon Press, Oxford (1988).
A. Singh, K. C. Reinhardt and W. A. Anderson, J. Appl. Phys 68, 3475 (1990).
N. Marcano, and A. Singh, (To be Published). Cambridge University Press New York, USA
About this article
Cite this article
Marcano, N., Singh, A. Electrical Characterization of in Schottky Contacts to Epitaxial n-In0.46Ga0.54P Grown on n+-GaAs by Mocvd. MRS Online Proceedings Library 448, 437–442 (1996). https://doi.org/10.1557/PROC-448-437