Enhanced Photoyield with Decreasing Film Thickness on Metal-Semiconductor Structures


Experimental results of the internal quantum yield Yi associated with the internal photoemission on Au/n-Si structures are presented. The samples were prepared on Si(100) and Si(111) substrates with photoemitter layer thicknesses ranging from 5 nm to 50 nm. The Yi was measured at temperatures between 165 K and 300 K with the photoexciting energy varying from 0.72 eV to 1.07 eV. It was found that the Yi increases with decreasing Au layer thickness with a strong enhancement (40 times) in regard to the conventional Fowler theory. This experimental result is in good agreement with model calculations taking account of hot carrier scattering in the photoemitter layer. Barrier energies are larger than deduced from the Fowler plot.

This is a preview of subscription content, access via your institution.


  1. [1]

    V.W. Chin, J.W.V. Storey and M.A. Green, Solid-St. Electron. 39, 277 (1996).

    CAS  Article  Google Scholar 

  2. [2]

    E. Roca, K. Kyllesbech Larsen, S. Kolodinski and R. Mertens, J. Appl. Phys. 79, 4426 (1996).

    CAS  Article  Google Scholar 

  3. [3]

    T.L. Lin, J.S. Park, S.D. Gunapala, E.W. Jones, and H.M. Del Castillo, IEEE Electron Device Letters 15, 103 (1994).

    CAS  Article  Google Scholar 

  4. [4]

    E.O. Kane, Phys. Rev. 147, 335 (1966).

    CAS  Article  Google Scholar 

  5. [5]

    V.L. Dalal, J.Appl.Phys. 42, 2274 (1971).

    CAS  Article  Google Scholar 

  6. [6]

    E.Y. Lee, L.J. Schowalter, J. Appl. Phys. 65, 4903 (1989).

    Article  Google Scholar 

  7. [7]

    M. Schmidt, M. Brauer, V. Hoffmann, Appl.Surf.Science 102, 303 (1996).

    CAS  Article  Google Scholar 

  8. [8]

    R.H. Fowler, Phys. Rev. 38, 45 (1931).

    CAS  Article  Google Scholar 

  9. [9]

    J.J. Quinn, Phys. Rev. 126, 1453 (1962).

    CAS  Article  Google Scholar 

  10. [10]

    Chung-Whei Kao, C.L. Anderson, and C.R. Crowell, Surf.Sci. 95, 321 (1980).

    CAS  Article  Google Scholar 

  11. [11]

    A.D. Katnani, N.G. Stoffel, H.S. Edelmann, G. Margaritondo, J.Vac.Sci.Technol. 19, 290 (1981).

    CAS  Article  Google Scholar 

  12. [12]

    H. Palm, M. Arbes, M. Schulz, Phys. Rev. Lett. 71, 2224 (1993).

    CAS  Article  Google Scholar 

  13. [11]

    S.M. Sze, Physics of Semiconductor Devices, 2nd Edn. Wiley, New York (1981), p. 15

    Google Scholar 

  14. [12]

    C.R. Crowell, S.M. Sze, W.G. Spitzer, Appl.Phys.Lett. 4, 91 (1964).

    CAS  Article  Google Scholar 

Download references

Author information



Corresponding author

Correspondence to V. Hoffmann.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Hoffmann, V., Brauer, M. & Schmidt, M. Enhanced Photoyield with Decreasing Film Thickness on Metal-Semiconductor Structures. MRS Online Proceedings Library 448, 413–418 (1996). https://doi.org/10.1557/PROC-448-413

Download citation