Microstructural Studies of Co Silicide Layers Formed on SiGe and SiGeC

Abstract

Transmission electron microscopy is used to investigate the structural development as a function of the annealing temperature of Co-silicides prepared on SiGe and SiGeC. The transition temperature from Co(SiGe) into Co(SiGe)2 is higher for SiGeC than for SiGe.

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Correspondence to S. Jin.

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Jin, S., Bender, H., Donaton, R.A. et al. Microstructural Studies of Co Silicide Layers Formed on SiGe and SiGeC. MRS Online Proceedings Library 448, 359–364 (1996). https://doi.org/10.1557/PROC-448-359

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