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Microstructural Studies of Co Silicide Layers Formed on SiGe and SiGeC

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Abstract

Transmission electron microscopy is used to investigate the structural development as a function of the annealing temperature of Co-silicides prepared on SiGe and SiGeC. The transition temperature from Co(SiGe) into Co(SiGe)2 is higher for SiGeC than for SiGe.

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Authors and Affiliations

  1. IMEC, Kapeldreef 75, B-3001, Leuven, Belgium

    S. Jin, H. Bender, R. A. Donaton & K. Maex

  2. Instituut Kern- en Stralingsfysica, University of Leuven, B-3001, Leuven, Belgium

    A. Vantomme & G. Langouche

  3. Department of Electrical Engineering, Princeton University, Princeton, NJ08544, USA

    A. St. Amour & J. C. Sturm

Authors
  1. S. Jin
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  2. H. Bender
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  3. R. A. Donaton
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  4. K. Maex
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  5. A. Vantomme
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  6. G. Langouche
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  7. A. St. Amour
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  8. J. C. Sturm
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Jin, S., Bender, H., Donaton, R.A. et al. Microstructural Studies of Co Silicide Layers Formed on SiGe and SiGeC. MRS Online Proceedings Library 448, 359–364 (1996). https://doi.org/10.1557/PROC-448-359

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  • DOI: https://doi.org/10.1557/PROC-448-359

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