Microstructural Studies of Co Silicide Layers Formed on SiGe and SiGeC

MRS Online Proceedings Library volume 448, pages359–364(1996)Cite this article

Abstract

Transmission electron microscopy is used to investigate the structural development as a function of the annealing temperature of Co-silicides prepared on SiGe and SiGeC. The transition temperature from Co(SiGe) into Co(SiGe)2 is higher for SiGeC than for SiGe.

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Affiliations

  1. IMEC, Kapeldreef 75, B-3001, Leuven, Belgium

    S. Jin, H. Bender, R. A. Donaton & K. Maex

  2. Instituut Kern- en Stralingsfysica, University of Leuven, B-3001, Leuven, Belgium

    A. Vantomme & G. Langouche

  3. Department of Electrical Engineering, Princeton University, Princeton, NJ08544, USA

    A. St. Amour & J. C. Sturm

Authors
  1. S. Jin
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  2. H. Bender
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  3. R. A. Donaton
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  4. K. Maex
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  5. A. Vantomme
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  6. G. Langouche
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  7. A. St. Amour
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  8. J. C. Sturm
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Correspondence to S. Jin.

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Jin, S., Bender, H., Donaton, R.A. et al. Microstructural Studies of Co Silicide Layers Formed on SiGe and SiGeC. MRS Online Proceedings Library 448, 359–364 (1996). https://doi.org/10.1557/PROC-448-359

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