An interfacial layer is formed between the TEOS(tetraethylorthosilicate) based oxide and silicon substrate when the oxide is thermally treated and it shows unique properties by leaving a unremovable layer in an H F(hydrofluoric acid) dipping. While the interface formed in the temperature range of 950 - 1100 °C demonstrates hydrophilic state, it renders the surface hydrophobic in the higher range of 1150 - 1200 °C. Its characteristics are analyzed by ESCA and the measurement of water contact angle on the silicon surface after stripping the oxide.
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Lee, T.J., Jeong, D.S., Song, C.S. et al. Interfacial Layer Formation of a Heat Treated Teos Based Oxide Prepared by a Pecvd Technique. MRS Online Proceedings Library 448, 333–338 (1996). https://doi.org/10.1557/PROC-448-333