Interface Roughness in Strained Si/SiGe Multilayers

Abstract

Diffuse x-ray reflection from a SiGe/Si multilayer grown pseudomorphically on slightly miscut Si(OOl) substrates has been studied theoretically and experimentally. In the framework of the Distorted-Wave Born Approximation (DWBA), we demonstrated that the distribution of the diffusely scattered intensity gives conclusive information on both the amount and the in-plane and inter-plane correlation properties of the interface roughness. The best model for the description of the interface-morphology was found to be a combination of a two-level model and a staircase model.

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Correspondence to A. A. Darhuber.

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Darhuber, A.A., Holy, V., Stangl, J. et al. Interface Roughness in Strained Si/SiGe Multilayers. MRS Online Proceedings Library 448, 153–158 (1996). https://doi.org/10.1557/PROC-448-153

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