Physics and Control of Si/Ge Heterointerfaces

Abstract

We describe physics and control of Si/SiGe heterointerfaces. A clear distinction will be made between the vertical and lateral effects of the Si/SiGe interface from the viewpoint of interface engineering. Ge surface segregation during nonequilibrium MBE growth and surfactant-mediated-growth are highlighted as prominent examples for the vertical effects while interface microroughness is addressed for the lateral effects. The influence of the interface effects on radiative recombination of indirect excitons is described in the context of SiGe-based optoelectronic applications.

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Fukatsu, S., Usami, N., Sunamura, H. et al. Physics and Control of Si/Ge Heterointerfaces. MRS Online Proceedings Library 448, 125–134 (1996). https://doi.org/10.1557/PROC-448-125

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