Critical Materials, Device Design, Performance and Reliability Issues in 4H-SiC Power Umosfet Structures

Abstract

The long-term reliability of gate insulator under high field stress of either polarity presents a constraint on the highest electric field that can be tolerated in a 4H-SiC UMOSFET under on or off condition. A realistic performance projection of 4H-SiC UMOSFET structures based on electric field in the gate insulator (1.5 MV/cm under on-condition and 3 MV/cm under off-condition) consistent with long-term reliability of insulator is provided for the breakdown voltage in the range of 600 to 1500 V. The use of P⁺ polysilicon gate allows us to use a higher field of 3 MV/cm in the insulator under off-condition and leads to a higher breakdown voltage as the Fowler Nordheim (FN) injection from the gate electrode is reduced. FN injection data is presented for p type 4H-SiC MOS capacitor under inversion at room temperature and at 325°C. It is concluded that the insulator reliability, and not the SiC, is the limiting factor and therefore the high temperature operation of these devices may not be practical.