Measurement of the Activation Energy in Phosphorous Doped Polycrystalline Diamond Thin Films Grown on Silicon Substrates by Hot Filament Chemical Vapor Deposition

Abstract

Although many researchers have studied boron-doped diamond thin films in the past several years, there have been few reports on the effects of doping CVD-grown diamond films with phosphorous. For this work, polycrystalline diamond thin films were grown by hot filament chemical vapor deposition (HFCVD) on p-type silicon substrates. Phosphorous was introduced into the reaction chamber as an in situ dopant during the growth. The quality and orientation of the diamond thin films were monitored by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Current-voltage (I-V) data as a function of temperature for gold-diamond film-silicon-aluminum structures were measured. The activation energy of the phosphorous dopants was calculated to be approximately 0.29 eV.

This is a preview of subscription content, access via your institution.

References

  1. 1.

    G. Sh. Gildenblat S. A. Grot, and A. Badzian, Proc. IEEE 79, 647 (1991).

    Article  Google Scholar 

  2. 2.

    M. W. Geis, N. N. Efremow, and J. A. von Windheim, Appl. Phys. Lett. 63, 952 (1993).

    CAS  Article  Google Scholar 

  3. 3.

    V. Venkatesan, J. von Windheim, and K. Das, IEEE Transactions on Electron Devices 40, 1556 (1993).

    CAS  Article  Google Scholar 

  4. 4.

    G. Zhao, T. Stacy, E. J. Charlson, E. M. Charlson, C.H. Chao, M. Hajsaid, J. Meese, G. popovici, and M. Prelas, Appl. Phys. Lett 61, 1119 (1992).

    CAS  Article  Google Scholar 

  5. 5.

    K. Okano, H. Kiyota, T. Iwasaki, T. Kurosu, M. Iida, and T. Nakamura in Proceedings of the 2nd International Conference on New Diamond Science and Technology, edited by R. Messier et. al., (Washington, DC, 1990) pp. 917–922.

  6. 6.

    K. Okano, H. Kiyota, T. Iwasaki, Y. Nakamura, Y. Akiba, T. Kurosu, M. Iida, and T. Nakamura, Appl. Phys. A 51, 344 (1990).

    Article  Google Scholar 

  7. 7.

    J. Bernholc, S. Kajihara, and A. Antonelli in Proceedings of the 2nd International Conference on New Diamond Science and Technology, edited by R. Messier et al., (Washington, DC, 1990) pp. 923–928.

  8. 8.

    R. Ramesham, C. Ellis, and T. Roppel in Proceedings of the First International Conference on the Applications of Diamond Films and Related Materials, edited by Y. Tzeng, M. Yoshikawa, M. Murakawa, and A. Feldman, (Elsevier, NY, 1991) pp. 411–416.

  9. 9.

    M. Geis, Proc. IEEE 79, 669 (1991).

    CAS  Article  Google Scholar 

  10. 10.

    S. Grot G. Gildenblat C. Hatfield, C. Wronski, A. Badzian, T. Badzian, and R. Messier, IEEE Electron Device Letters 11, 100 (1990).

    Article  Google Scholar 

  11. 11.

    S. Grot, C. Hatfield, G. Gildenblat A. Badzian, and T. Badzian, Appl. Phys. Lett 50, 1542 (1991).

    Article  Google Scholar 

Download references

Acknowledgments

The authors wish to thank Louis M. Ross and Naiyu Zhao for their assistance in the SEM and XRD studies.

Author information

Affiliations

Authors

Corresponding author

Correspondence to S. Mirzakuchaki.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Mirzakuchaki, S., Golestanian, H., Charlson, E. et al. Measurement of the Activation Energy in Phosphorous Doped Polycrystalline Diamond Thin Films Grown on Silicon Substrates by Hot Filament Chemical Vapor Deposition. MRS Online Proceedings Library 423, 655–660 (1996). https://doi.org/10.1557/PROC-423-655

Download citation