Abstract
Although many researchers have studied boron-doped diamond thin films in the past several years, there have been few reports on the effects of doping CVD-grown diamond films with phosphorous. For this work, polycrystalline diamond thin films were grown by hot filament chemical vapor deposition (HFCVD) on p-type silicon substrates. Phosphorous was introduced into the reaction chamber as an in situ dopant during the growth. The quality and orientation of the diamond thin films were monitored by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Current-voltage (I-V) data as a function of temperature for gold-diamond film-silicon-aluminum structures were measured. The activation energy of the phosphorous dopants was calculated to be approximately 0.29 eV.
Similar content being viewed by others
References
G. Sh. Gildenblat S. A. Grot, and A. Badzian, Proc. IEEE 79, 647 (1991).
M. W. Geis, N. N. Efremow, and J. A. von Windheim, Appl. Phys. Lett. 63, 952 (1993).
V. Venkatesan, J. von Windheim, and K. Das, IEEE Transactions on Electron Devices 40, 1556 (1993).
G. Zhao, T. Stacy, E. J. Charlson, E. M. Charlson, C.H. Chao, M. Hajsaid, J. Meese, G. popovici, and M. Prelas, Appl. Phys. Lett 61, 1119 (1992).
K. Okano, H. Kiyota, T. Iwasaki, T. Kurosu, M. Iida, and T. Nakamura in Proceedings of the 2nd International Conference on New Diamond Science and Technology, edited by R. Messier et. al., (Washington, DC, 1990) pp. 917–922.
K. Okano, H. Kiyota, T. Iwasaki, Y. Nakamura, Y. Akiba, T. Kurosu, M. Iida, and T. Nakamura, Appl. Phys. A 51, 344 (1990).
J. Bernholc, S. Kajihara, and A. Antonelli in Proceedings of the 2nd International Conference on New Diamond Science and Technology, edited by R. Messier et al., (Washington, DC, 1990) pp. 923–928.
R. Ramesham, C. Ellis, and T. Roppel in Proceedings of the First International Conference on the Applications of Diamond Films and Related Materials, edited by Y. Tzeng, M. Yoshikawa, M. Murakawa, and A. Feldman, (Elsevier, NY, 1991) pp. 411–416.
M. Geis, Proc. IEEE 79, 669 (1991).
S. Grot G. Gildenblat C. Hatfield, C. Wronski, A. Badzian, T. Badzian, and R. Messier, IEEE Electron Device Letters 11, 100 (1990).
S. Grot, C. Hatfield, G. Gildenblat A. Badzian, and T. Badzian, Appl. Phys. Lett 50, 1542 (1991).
Acknowledgments
The authors wish to thank Louis M. Ross and Naiyu Zhao for their assistance in the SEM and XRD studies.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Mirzakuchaki, S., Golestanian, H., Charlson, E. et al. Measurement of the Activation Energy in Phosphorous Doped Polycrystalline Diamond Thin Films Grown on Silicon Substrates by Hot Filament Chemical Vapor Deposition. MRS Online Proceedings Library 423, 655–660 (1996). https://doi.org/10.1557/PROC-423-655
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-423-655