Low Volume Resistivity Chemical Vapor Deposited Boron Doped Polycrystalline Thin Diamond Film Growth on Sapphire

Abstract

Hot-filament chemical vapor deposited (HFCVD) boron doped polycrystalline diamond thin films having low volume resistivity were grown on sapphire. The films were characterized using scanning electron microscope (SEM), X-ray diffraction, and current-voltage measurements. SEM micrographs show good crystalline structure with preferred (100) orientation normal to the surface of the film. X-ray diffraction pattern revealed diamond characteristics with the four typical diamond peaks present. Finally, the obtained I-V characteristics indicated that the film’s volume resistivity is at least two orders of magnitude lower than those of HFCVD polycrystalline diamond thin films grown on silicon under similar growth conditions.

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Acknowledgments

The authors would like to thank Mr. L. M. Ross and Mr. Naiyu Zhao for then-assistance in SEM and XRD studies.

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Correspondence to Hassan Golestanian.

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Golestanian, H., Mirzakuchaki, S., Charlson, E. et al. Low Volume Resistivity Chemical Vapor Deposited Boron Doped Polycrystalline Thin Diamond Film Growth on Sapphire. MRS Online Proceedings Library 423, 589–594 (1996). https://doi.org/10.1557/PROC-423-589

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