Effect of Si Doping on the Structure of GaN


The influence of Si doping on the structure of GaN grown by metal-organic chemical-vapor deposition (MOCVD) has been studied using transmission electron microscopy (TEM), x-ray diffraction and Raman spectroscopy. Undoped and low Si doped samples were compared with samples of increased dopant concentration. In addition, defect reduction due to different buffer layers (A1N and GaN) is discussed. Silicon doping improves surface morphology and influences threading dislocation arrangement. High doping leads to a more random distribution of dislocations. Based on this study it appears (for the same dopant concentration) that an A1N buffer layer can significantly reduce the number of threading dislocations, leaving the samples more strained. However, no significant reduction of threading dislocations could be observed in the samples with GaN buffer layer. These samples are the least strained.

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This work was supported by the Director, Office of Basic Science, Materials Science Division, U.S. Department of Energy under the Contract No. DE-AC03-76FS00098. Use of the microscopes in the National Center of Electron Microscopy in LBNL is greatly appreciated.

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Correspondence to Zuzanna Liliental-Weber.

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Liliental-Weber, Z., Ruvimov, S., Suski, T. et al. Effect of Si Doping on the Structure of GaN. MRS Online Proceedings Library 423, 487–493 (1996). https://doi.org/10.1557/PROC-423-487

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