This paper describes the design and fabrication of a carbon based thin film transistor (TFT). The active layer is formed from a novel form of amorphous carbon (a-C) known as tetrahedrally bonded amorphous carbon (ta-C) which can be deposited at room temperature using a filtered cathodic vacuum arc (FCVA) technique. In its 'as grown' condition, ta-C is p-type and the devices described here, produced using undoped material, exhibit p-channel operation.
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The authors are grateful to K.M. Knowles of the Department of Materials Science and Metallurgy, Cambridge University for the TEM picture and the information relating to it.
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Clough, F., Kleinsorge, B., Milne, W. et al. Tetrahedral Amorphous Carbon Thin Film Transistors. MRS Online Proceedings Library 423, 39–43 (1996). https://doi.org/10.1557/PROC-423-39