Boron Nitride (BN) thin films are deposited on heated (650 °C ) silicon (100) substrates using Nd:YAG (532 nm) and KrF excimer (248 nm) laser ablation. The laser beam is focused on the hBN targets. The films are grown using a laser repetition rate of 10 Hz at energy density 3.8 J/cm 2. Argon gas is mixed with the reactant nitrogen gas and the total gas pressure in the chamber during deposition is 20 Pa. Auger Electron Spectroscopy shows that the N/B composition ratio depends on the mixture ratio of nitrogen and the relative emission intensity of B + (345.1 nm). The surface morphology of the films prepared by the 532 nm laser is rough with large particulates, whereas much smoother surfaces with fewer and smaller particulates are obtained with the 248 nm laser. Fourier Transform IR measurement shows that the cBN phase in the films is enhanced by applying the negative RF self–bias voltage ( ~ 200 V) on the substrate electrode.
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The authors wish to thank Dr. T. Ikegami and Dr. Y. Yamagata of Kumamoto University for their helpful discussions, and Dr. H. Abe of Ceramic Research Center of Nagasaki and R. Hatada of Technology Center of Nagasaki for their technical assistance with the data. This work was supported in part by a Research Fund of Nagasaki Super Technology Development Association and a Grant–in–Aid for Scientific Research from the Ministry of Education, Science and Culture, Japan.
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Suda, Y., Nakazono, T., Ebihara, K. et al. Laser Wavelength Dependent Properties of BN Thin Films Deposited by Laser Ablation. MRS Online Proceedings Library 423, 397–402 (1996). https://doi.org/10.1557/PROC-423-397