GaN Growth by Nitrogen ECR-CVD Method

Abstract

A new approach toward GaN growth using electron cyclotron resonance assisted microwave plasma enhanced chemical vapor deposition (ECR-CVD) method has been implemented. This growth technique allows for low- as well as high-temperature deposition, the use of pure nitrogen source, and a wide operating pressure that is between MOCVD and MOMBE. The unique features of this technique enable the growth of the epitaxial layer of GaN on a variety of substrates including sapphire, silicon, and LiGaO2. SEM, XRD, Raman, photoluminescence (PL), and Hall measurement are employed to characterize the deposited films. Highly oriented, (0001) textured films in the expected wurtzite structure with blue emission have been obtained.

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Acknowledgments

This work is supported by internal funding from Institute of Atomic and Molecular Sciences, Academia Sinica, Taiwan. One of the authors, C.H. Chao, acknowledges the post-doctoral fellowship from National Science Council, Taiwan.

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Correspondence to K.H. Chen.

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Chen, K., Chao, C., Chuang, T. et al. GaN Growth by Nitrogen ECR-CVD Method. MRS Online Proceedings Library 423, 377–383 (1996). https://doi.org/10.1557/PROC-423-377

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