Abstract
A new approach toward GaN growth using electron cyclotron resonance assisted microwave plasma enhanced chemical vapor deposition (ECR-CVD) method has been implemented. This growth technique allows for low- as well as high-temperature deposition, the use of pure nitrogen source, and a wide operating pressure that is between MOCVD and MOMBE. The unique features of this technique enable the growth of the epitaxial layer of GaN on a variety of substrates including sapphire, silicon, and LiGaO2. SEM, XRD, Raman, photoluminescence (PL), and Hall measurement are employed to characterize the deposited films. Highly oriented, (0001) textured films in the expected wurtzite structure with blue emission have been obtained.
Similar content being viewed by others
References
S. Strite and H. Morkoc, J. Vac. Technol. B10, 1237 (1992).
S. Nakamura, T. Mukai, and M. Senoh, Appl. Phys. Lett. 64, 1687 (1994).
M. AsifKhan, S. Krishnankutty, R.A. Skogman, J.N. Kuznia, D.T. Olson, and T. George, Appl. Phys. Lett. 65, 520 (1994).
H. Amano, T. Tanaka, Y. Kunii, S.T. Kim, and I. Akasaki, Appl. Phys. Lett. 64, 1377 (1994).
H. Morkoc, S. Strite, G.B. Gao, M.E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76, 3 (1994).
T.P. Chow and R. Tyagi. IEEE Trans. Electron. Dev. 41, 1481 (1994).
S. Nakamura, Jpn. J. Appl. Phys. 30, L1705 (1991).
S. Nakamura, M. Senoh, and T. Mukai, Jpn. J. Appl. Phys. 62, 2390 (1993).
C.R. Abernathy, P. Wisk, F. Ren, and S.J. Pearton, J. Vac. Sei. Technol. B11, 179 (1993).
T.D. Moustakas, R.J. Molnar, T. Lei, G. Menon and C.R. Eddy Jr., Mat. Res. Soc. Symp. Proc. 242, 427 (1992).
I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu and N. Sawaki, J. Cryst. Growth 98, 209 (1989).
K.H. Chen, Y.L. Lai, J.C Lin, K.J. Song, L.C. Chen, amd C.Y. Huang, Diamond and Related Mater. 4, 460 (1995).
K.H. Chen, Y.L. Lai, L.C Chen, J.Y. Wu, and F.J. Kao, Thin Solid Films 270, 143 (1995).
L. Pavesi, M. Guzzi, J. Appl. Phys. 75, 15 (1994).
L.J. van der Pauw, Philips Res. Repts 13, 1–9, (1958).
Acknowledgments
This work is supported by internal funding from Institute of Atomic and Molecular Sciences, Academia Sinica, Taiwan. One of the authors, C.H. Chao, acknowledges the post-doctoral fellowship from National Science Council, Taiwan.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Chen, K., Chao, C., Chuang, T. et al. GaN Growth by Nitrogen ECR-CVD Method. MRS Online Proceedings Library 423, 377–383 (1996). https://doi.org/10.1557/PROC-423-377
Published:
Issue Date:
DOI: https://doi.org/10.1557/PROC-423-377