We studied high dose implantation of tungsten into 6H-silicon carbide in order to synthesize an electrically conductive layer. Implantation was performed at 200 keV with a dose of 1×1017 W+cm−2 at temperatures of 90°C and 500°C. The samples were subsequently annealed either at 950°C or 1100°C. The influence of implantation and annealing temperatures on the reaction of W with SiC was investigated. Rutherford backscattering spectrometry (RBS), x-ray diffraction (XRD) and Auger electron spectroscopy (AES) contributed to study the structure and composition of the implanted layer as well as the chemical state of the elements. The implantation temperature influences the depth distribution of C, Si and W as well as the damage production in SiC. The W depth profile exhibits a bimodal distribution for high temperature implantation and a customary gaussian distribution for room temperature implantation. Formation of tungsten carbide and silicide was observed in each sample already in the as-implanted state. Implantation at 90°C and annealing at 950°C lead to crystallization of W2C; tungsten silicide, however, remains amorphous. After implantation at 500°C and subsequent annealing at 1100°C crystalline W5Si3 forms, while tungsten carbide is amorphous.
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The authors want to thank Dr. J. Schöneich for the implantation, Mrs. E. Quaritsch and Dr. H. Reuther for the AES and Drs. M. Voelskow and M. Mäder for the RBS measurements. We are especially indebted to Dr. R. Yankov for fruitful discussions.
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Weishart, H., Matz, W. & Skorupa, W. Ion Beam Synthesis by Tungsten Implantation into 6H-Silicon Carbide at Elevated Temperatures. MRS Online Proceedings Library 423, 195–200 (1996). https://doi.org/10.1557/PROC-423-195