Characterization of Zirconium - Diamond Interfaces

Abstract

Thin Zr films were deposited on natural single crystal diamond (100) substrates by e-beam evaporation in ultra-high vacuum (UHV). Before metal deposition the surfaces were cleaned by UHV anneals at either 500°C or 1150°C. Following either one of these treatments a positive electron affinity was determined by means of UV photoemission spectroscopy (UPS). Depositing 2Å of Zr induced a NEA on both surfaces. Field emission current - voltage measurements resulted in a threshold field (for a current of 0.1 µA) of 79 V/µm for positive electron affinity diamond surfaces and values as low as 20 V/µm for Zr on diamond.

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Acknowledgments

This work was supported by the Office of Naval Research (Contract No. N00014-92-J-1477).

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Correspondence to P.K. Baumann.

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Baumann, P., Bozeman, S., Ward, B. et al. Characterization of Zirconium - Diamond Interfaces. MRS Online Proceedings Library 423, 143–148 (1996). https://doi.org/10.1557/PROC-423-143

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