Results are reported for ohmic contacts formed on n-type 4H and 6H-SiC using nichrome (80/20 weight percent Ni/Cr). In comparison to contacts formed on 6H-SiC using pure Ni, the electrical characteristics of these NiCr contacts are similar (~ 1E-5 Ω-cm2 for moderately doped material), and composite Au/NiCr contacts exhibit good stability during long-term anneals (~ 2500 hr) at 300 C without the requirement of a diffusion barrier layer between the ohmic contact layer and the Au cap layer. The use of NiCr also results in success rates near 100% for direct wire bonding to the Au cap layers.
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This work was supported by the Center for Commercial Development of Space and Advanced Electronics, located at Auburn University, under NASA Grant NAGW-1192-CCDS-AD.
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Luckowski, E., Williams, J., Bozack, M. et al. Improved Nickel Silicide Ohmic Contacts to N-Type 4H and 6H-SiC Using Nichrome. MRS Online Proceedings Library 423, 119–124 (1996). https://doi.org/10.1557/PROC-423-119