Solid State Interfacial Reactions Between Tic Thin Films and Ti3AI Substrates


The products and kinetics of solid state reactions between TiC and Ti3Al have been investigated using X-ray diffractometry (XRD) and Auger electron spectroscopy (AES) with Ar ion beam sputtering. Diffusion couples were prepared by sputtering TiC thin films onto polished Ti3AI substrates, and then isothermally annealed in vacuum in the temperature range of 800 to 1000°C for 0.25 to 2.25 hours. The thickness of the interfacial reaction layer was obtained from AES elemental concentration depth profiling, while the reaction products were identified from XRD spectra. In the TiC/Ti3Al system, the reaction product was primarily P(Ti3AlC) phase. The growth-rate of the reaction product was fitted to a parabolic growth law (dZ/dt = k1/Z) and the activation energy of the rate constant was about 36.16 kcal/mole. The reaction mechanism will be discussed on the basis of thermodynamical equilibrium in Ti-Al-C ternary system.

This is a preview of subscription content, access via your institution.


  1. 1

    R. A. MacKay, P. K. Brindley, and F. H. Froes, J. Metals, 43 (5), p. 23 (1991).

    CAS  Google Scholar 

  2. 2

    J. M. Larsen, W. C. Revelos, and M. L. Gambone, in Intermetallic Matrix Composites II, edited by D. B. Miracle et al (MRS Symp. Proc. 273, Pittsburgh, PA, 1992), p. 3–16.

  3. 3

    A. G. Metcalf and M. J. Klein, in Composite Materials: Interfaces in Metal Matrix Composites, edited by A. G Metcalf (Academic Press, New York, 1974), pp. 142–154.

    Google Scholar 

  4. 4

    C. G. Rhodes, ref. 2, p. 17–29.

  5. 5

    T. C. Chou and A. Joshi, J. Mater. Res., 7(5), p. 1253 (1992).

    CAS  Article  Google Scholar 

  6. 6

    W. Si, P. Li, and R. Wu, in Control of Interfaces in Metal and Ceramics Composites, edited by R. Y. Lin and S. G. Fishman (TMS Proc, Warrendale, PA, 1994), p. 81–94.

    Google Scholar 

  7. 7

    A. K. Misra, Metall. Trans. A, 22, p. 715 (1990).

    Article  Google Scholar 

  8. 8

    D. G Konitzer and M. H. Loretto, Materials Science and Technology, July, 5, p. 627 (1989).

    CAS  Article  Google Scholar 

  9. 9

    L. E. Davis, N. G. MacDonald, P. W. Palmberg, and R. E. Weber, Handbook of Auger Electron Spectroscopy, (published by Perkin-Elmer Corp., Eden Prairie, MN), 1978, pp. 5–17.

    Google Scholar 

  10. 10

    P. Shewmon, Diffusion in Solids, 2nd edition, TMS, Warrendale, PA, 1989, pp. 9–26.

    Google Scholar 

  11. 11

    J. C. Schuster, H. Nowotny, and C. Vaccaro, J. Solid State Chemistry, 32, p. 213 (1980).

    CAS  Article  Google Scholar 

  12. 12

    D. G. Konitzer and M. H. Loretto, Acta. Metall., 37, p. 97 (1989).

    Article  Google Scholar 

  13. 13

    R. P. Elliott, Constitution of Binary Alloys, McGraw-Hill, New York, 1965, pp. 232–33.

    Google Scholar 

Download references

Author information



Corresponding author

Correspondence to Weimin Si.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Si, W., Dudley, M., Li, P. et al. Solid State Interfacial Reactions Between Tic Thin Films and Ti3AI Substrates. MRS Online Proceedings Library 398, 275–280 (1995).

Download citation