Solid State Interfacial Reactions Between Tic Thin Films and Ti3AI Substrates

Abstract

The products and kinetics of solid state reactions between TiC and Ti3Al have been investigated using X-ray diffractometry (XRD) and Auger electron spectroscopy (AES) with Ar ion beam sputtering. Diffusion couples were prepared by sputtering TiC thin films onto polished Ti3AI substrates, and then isothermally annealed in vacuum in the temperature range of 800 to 1000°C for 0.25 to 2.25 hours. The thickness of the interfacial reaction layer was obtained from AES elemental concentration depth profiling, while the reaction products were identified from XRD spectra. In the TiC/Ti3Al system, the reaction product was primarily P(Ti3AlC) phase. The growth-rate of the reaction product was fitted to a parabolic growth law (dZ/dt = k1/Z) and the activation energy of the rate constant was about 36.16 kcal/mole. The reaction mechanism will be discussed on the basis of thermodynamical equilibrium in Ti-Al-C ternary system.

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Correspondence to Weimin Si.

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Si, W., Dudley, M., Li, P. et al. Solid State Interfacial Reactions Between Tic Thin Films and Ti3AI Substrates. MRS Online Proceedings Library 398, 275–280 (1995). https://doi.org/10.1557/PROC-398-275

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