Mev Ion Induced Damages and their Annealing Behavior in Silicon


MeV ion induced damage and annealing behavior in Si are reported using 3 ion species such as B, P and Si. Si self implantations were done to reveal the intrinsic behavior of secondary defect formation by excluding the possibility of chemical interactions between substrate atoms and dopant atoms. Experimental results of B and P implantations were compared to those of Si. TEM observations showed that interstitial type secondary defects are exclusively formed at around Rp. DCXRD rocking curve analyses indicated that an isolated layer of (+) strain is built up at around Rp after strain relaxation by annealing. Sources for secondary defects were thought to be Si self interstitials. Atomistic mechanisms of secondary defect formation and the effect of ion species on them are discussed.

This is a preview of subscription content, access via your institution.


  1. 1

    S. Odanaka, T. Yabu, N. Shimizu, H. Umimoto and T. Ohzone, IEEE, ED-37, p.1, 735 (1990)

    Google Scholar 

  2. 2

    K. Tsukamoto, S. Komori, T. Kuroi and Y. Akasaka, Nucl. Instr. and Meth., B59/60, p.584 (1991)

    Article  Google Scholar 

  3. 3

    J. S. Williams, R. G. Elliman, M.C. Ridgway, C. Jagadish, S. L. Ellingboe, R. Goldberg, M. Petravic, W. C. Wong, Z. Dezhang, E. Nygren and B.G Svensson, Nucl. Instr. and Meth., B80/81,p. 507(1993)

    Article  Google Scholar 

  4. 4

    H. Sayama, A. Kinomura, Y. Yuba and M. Takai, Nucl. Instr. and Meth., B80/81, p. 587 (1993)

    Article  Google Scholar 

  5. 5

    T. Kuroi, S. Komori, H. Miyatake, K. Tsukamoto and Y. Akasaka, SSDM., p. 441 (1990)

  6. 6

    T. Kuroi, S. Komori, K. Fukumoto, Y. Mashiko, K. Tsukamoto and Y. Akasaka, SSDM., p. 56(1991),

  7. 7

    H. Wong, N. W. Cheung, P. K. Chu, J. Liu and J. W. Mayer, Appl. Phys. Lett., 52, p. 1,023 (1988)

    CAS  Article  Google Scholar 

  8. 8

    M. Tamura, N. Natsuaki, Y. Wada and E. Mitani, Nucl. Instr. and Meth., B21, p. 438 (1987)

    CAS  Article  Google Scholar 

  9. 9

    M. Tamura and T. Suzuki, Nucl. Instr. and Meth., B39, p. 318 (1989)

    CAS  Article  Google Scholar 

  10. 10

    O. W. Holland and C. W. White, Nucl. Instr. and Meth., B59/60, p. 353 (1991)

    Article  Google Scholar 

  11. 11

    D. K. Browen, N. Loxley, B. K. Tanner, L. Cooke and M. A. Capano, Mat. Res. Soc. Proa, 208, p. 113 (1991)

    Article  Google Scholar 

  12. 12

    N. H. Cho, K. W. Jang, C. S. Kim, J. Y. Lee and J. S. Ro, J. of Kor. Vac. Soc., Vol.4 NO. 1 p. 109 (1995)

    Google Scholar 

  13. 13

    N. H. Cho, K. W. Jang, K. S. Suh, J. Y. Lee and J. S. Ro, in Advanced Materials and Processing, edited by K. S. Shin, J. K. Yoon and S. J. Kim (Proceedings of the Second Pacific Rim International Conference vol. 2, Kyungju, Korea. 1995), p 1,303–1,308.

  14. 14

    A. M. Mazzone, Phys. Stat. Sol., (a) 95, p 149 (1986)

    Article  Google Scholar 

Download references

Author information



Corresponding author

Correspondence to Nam-Hoon Cho.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Cho, NH., Jang, KW., Lee, JY. et al. Mev Ion Induced Damages and their Annealing Behavior in Silicon. MRS Online Proceedings Library 396, 781 (1995).

Download citation