MeV ion induced damage and annealing behavior in Si are reported using 3 ion species such as B, P and Si. Si self implantations were done to reveal the intrinsic behavior of secondary defect formation by excluding the possibility of chemical interactions between substrate atoms and dopant atoms. Experimental results of B and P implantations were compared to those of Si. TEM observations showed that interstitial type secondary defects are exclusively formed at around Rp. DCXRD rocking curve analyses indicated that an isolated layer of (+) strain is built up at around Rp after strain relaxation by annealing. Sources for secondary defects were thought to be Si self interstitials. Atomistic mechanisms of secondary defect formation and the effect of ion species on them are discussed.
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Cho, NH., Jang, KW., Lee, JY. et al. Mev Ion Induced Damages and their Annealing Behavior in Silicon. MRS Online Proceedings Library 396, 781 (1995). https://doi.org/10.1557/PROC-396-781