Ion Implantation Damage and B Diffusion in Low Energy B Implantation with Ge Preimplantation


For low energy B (LEB) implantation into Si, the channeling tail is larger than for BF2+ implantation, so Ge+ preamorphization is expected to provide a shallower junction. We studied the Ge+ and B+ implantation damages and the damage-induced B diffusion. The substrate implanted Ge+ with 2×l014 cm-2, that is, a complete amorphization, retains less residual defects after RTA. However the sheet resistivity (S) is higher than the sample implanted with only LEB. Solid phase epitaxy (SPE) of amorphized layer causes B out-diffusion. The diffusion length of the amorphized substrate is smaller than that of LEB. We expect that the B diffusion is enhanced by the LEB damage, which corresponds to the enhanced diffusion of light damage.

This is a preview of subscription content, access via your institution.


  1. 1

    M. I. Current, B. Adibi, D. Wanger, M. Anjum, W. McComas, and S. Prussin, proceeding of Ion Implantation Technology 94, I-4.3 (1994)

    Google Scholar 

  2. 2

    G. Bai and M.-A. Nicolet, J. Appl. Phys. 70, 3551 (1991)

    CAS  Article  Google Scholar 

  3. 3

    Y. Kikuchi, M. Kase, M. Kimura, and M. Yoshida, Nucl. Instr. Meth. B80/81, 628 (1993)

    Article  Google Scholar 

  4. 4

    M. Kase, Y. Kikuchi, M. Kimura, H. Mori, and T. Ogawa, Appl. Phys. Lett. 59, 1335 (1991).

    Article  Google Scholar 

  5. 5

    M. Kase, Y. Kikuchi, Y. Kataoka, and H. Mori, Nucl. Instr. Meth. B74, 75 (1993)

    CAS  Article  Google Scholar 

  6. 6

    P. B. Griffin, R. F. Lever, P. A. Packan, and J. D. Plummer, Appl. Phys. Lett. 64, 1242 (1994).

    CAS  Article  Google Scholar 

  7. 7

    J. F. Zieglar, J. P. Biersack and L. G. Haggmark, The Stopping and Range of Ions in Solids, ed. J. F. Zieglar, (Pergamon Press, New York, 1985)

  8. 8

    A. Claverie, L. Laânab, C. Bonafos, C. Bergaud, A. Martinez, and D. Mathiot, Nucl. Instr. Meth. B96, 202 (1995)

    Article  Google Scholar 

  9. 9

    J. M. Poate and J. S. Williams, Amorphization and Crystallization of Semicondutors, (Ion Implantation and Beam Processing, edited by J. S. Williams and J. M. Poate) Academic Press, New York, 1984

  10. 10

    G. Masetti, M. Severi, and S. Solmi, IEEE. trans. Electron. Devices, ED-30, 764 (1983)

    CAS  Article  Google Scholar 

Download references

Author information



Corresponding author

Correspondence to M. Kase.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Kase, M., Mori, H. Ion Implantation Damage and B Diffusion in Low Energy B Implantation with Ge Preimplantation. MRS Online Proceedings Library 396, 757 (1995).

Download citation