Abstract
Focused Ion Beams offer a new method of measuring the size of polymer resist features on integrated circuits. The short penetration range of an ion relative to an electron is shown to offer fundamental advantages for critical dimension (CD) metrology. By confining the polymer damage to the very near surface, ion beams can induce less dimensional change than scanning electron microscopes during the measurement process. This can result in improved CD measurement precision. The erosion rate of polymers to various ion species is also presented, and we show that erosion is non-linear with ion dose. The use of FIB for forming resist cross sections is also demonstrated. An H20 gas assisted etching process for polymers has been developed, and is shown to significantly improve the quality of resist cross sections.
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Wagner, A., Blauner, P., Longo, P. et al. Focused Ion Beam Metrology. MRS Online Proceedings Library 396, 675 (1995). https://doi.org/10.1557/PROC-396-675
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DOI: https://doi.org/10.1557/PROC-396-675