Short-Time Hydrogen Passivation of Poly-Si CMOS Thin film Transistors by High Dose Rate Plasma Ion Implantation

Abstract

Plasma ion implantation (PII) hydrogenation has been developed for defect passivation in polycrystalline silicon (poly-Si) thin film transistors (TFTs). A high dose rate PII process using a microwave multipolar bucket (MMB) plasma source and a 12.5 kHz pulse generator achieves saturation of device parameter improvement in 5 minutes, which is much shorter than other hydrogenation methods investigated thus far. These results have been achieved in one sixth the implant time of our previous PII experiments and are in good agreement with our process simulation.

This is a preview of subscription content, access via your institution.

References

  1. 1

    T. I. Kamins and P. J. Marcoux, IEEE Electron Device Lett. 1, 159 (1980).

    Article  Google Scholar 

  2. 2

    I. Wu, T. Huang, W. B. Jackson, A.G. Lewis and A. Chiang, IEEE Electron Device Lett 12, 181 (1991).

    CAS  Article  Google Scholar 

  3. 3

    R. A. Ditizio, G. Liu, S.J. Fonash, B. C. Hseih and D.W. Greve, Appl. Phys. Lett. 56, 1140 (1990).

    CAS  Article  Google Scholar 

  4. 4

    K. Baert, H. Murai, K. Kobayashi, H. Namizaki and M. Nunoshita, Jpn. J. Appl. Phys. 32, 2601 (1993).

    CAS  Article  Google Scholar 

  5. 5

    J. D. Bernstein, S. Qin, C. Chan and T.-J. King, IEEE Electron Device Lett. 16, 421 (1995).

    CAS  Article  Google Scholar 

  6. 6

    J. D. Bernstein, S. Qin, C. Chan and T.-J. King, IEEE Trans. on Electron Devices submitted (1995).

  7. 7

    J. R. Conrad, J. Radtke, R. A. Dodd and F. Worzala, J. Appl. Phys. 62, 4591 (1987).

    CAS  Article  Google Scholar 

  8. 8

    N. W. Cheung, Nucl. Instr. and Meth. B55, 811 (1991).

    CAS  Article  Google Scholar 

  9. 9

    S. Qin, N. McGruer, C. Chan and K. Warner, IEEE Trans. on Electron Devices 39, 2354 (1992).

    CAS  Article  Google Scholar 

  10. 10

    J. F. Ziegler, J.P. Biersack and U. Littmark, The Stopping Range of Ions in Solids, Pergamon Press, New York, 1985.

  11. 11

    T.-J. King, M. G. Hack, and I Wu, J. Appl. Phys. 17, 908 (1994).

    Article  Google Scholar 

Download references

Author information

Affiliations

Authors

Corresponding author

Correspondence to Shu Qin.

Rights and permissions

Reprints and Permissions

About this article

Cite this article

Qin, S., Bernstein, J.D., Zhou, Y. et al. Short-Time Hydrogen Passivation of Poly-Si CMOS Thin film Transistors by High Dose Rate Plasma Ion Implantation. MRS Online Proceedings Library 396, 515 (1995). https://doi.org/10.1557/PROC-396-515

Download citation