Carbon nitride (CNX) films were prepared by nitrogen ion implantation into carbon films (a-C) deposited on Si substrates by the anodic vacuum arc. Plasma Immersion Ion Implantation (PIII) and Ion Beam (IB) implantation methods were used. X-ray Photoelectron Spectroscopy (XPS) C Is and N Is spectra of all CNX films indicate the formation of carbon-nitrogen bonds. The bonds are associated with the C 1s peaks at 286.6 eV and 285.6 eV , and the N 1s peaks at 399.1 eV and 400.6 eV. Raman spectra show that the structure of the implanted films (CNX) becomes more amorphous as the two broad peaks at 1577 cm-1 (G line) and 1350 cm-1 (D line) observed in the a-C films disappear and a broad asymmetric peak around 1500 cm-1 is formed. The interfacial tension between the a-C films and the substrate , obtained from the contact angle measurements, decreased by more than half after nitrogen implantation.
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A.Y. Liu and M.L. Cohen, Science 245, 841 (1989); Phys. Rev. B 32, 7988 (1985).
A.Y. Liu and R.M. Wentzcovitch, Phys. Rev. B 50, 10362 (1994).
D. Marton, K.J. Boyd, A.H. Al-Bayati, S.S. Todorov, and J.W. Rabalais, Phys. Rev. Lett. 73, 118(1994).
K.M. Yu, M.L. Cohen, E.E. Haller, W.L. Hansen, A.Y. Liu, and I.C. Wu, Phys. Rev. B 49, 5034 (1994).
C. Niu, Y.Z. Lu, and C.M. Lieber, Science 261, 334 (1993).
K. Ogata, J. Chubaci, and F. Fujimoto, J. Appl. Phys. 76(6), 3791 (1994).
D. Li, E. Cutiongco, Y. Chung, M. Wong, and W. Sproul, Surface and Coating Technology 68/69, 611 (1994).
I. F. Husein, Y. Zhou, F. Li, R.C. Allen, C. Chan, J.I. Kleiman, and Y. Gudimenko, Materials Science and Engineering A (in press).
M. Iwaki, K. Takahashi, and A. Sekiguchi, J. Mater. Res. 5, 2562 (1990).
A. Hoffman, H. Geller, I. Gouzman, C. Cytermann, R. Brener, and M. Kenny, Surface and Coatings Technology 68/69, 616 (1994).
S.P. Withrow, J.M. Williams, S. Prawer, and D. Barbara, J. Appl. Phys. 78, 3060 (1995).
A. Hoffman, I. Gouzman, and R. Brener, Appl. Phys. Lett. 64, 845 (1994).
S. Meassick, C. Chan, and R. Allen, Surface and Coatings Tech. 54, 343 (1992).
S. Meassick, J. Kumpf, R. Allen, C. Chan, and T. Sroda, Materials Letters 14, 63 (1992).
Z. Xia and C. Chan, J. Appl. Phys. 73, 3651 (1993).
I.F. Husein, F. Li, Y. Zhou, R.C. Allen, and C. Chan in Film Synthesis and Growth Using Energetic Beams, edited by H.A. Atwater, J.T. Dickinson, D.H. Lowndes, and A. Polman (Mater. Res. Soc. Proc. 388, Pittsburgh, PA, 1995) pp. 281–286.
W. Gutowski, in Fundamentals of Adhesion, edited by L.H. Lee (Plenum, New York, 1991) p. 126.
C. D. Wagner, Handbook of X-ray Photoelectron Spectroscopy, (Perkin-Elmer, Physical Electronics Division, Eden Prairie, MN, 1978).
M.S. Dresselhaus and R. Kalish, Ion Implantation in Diamond. Graphite and Related Materials, (Springer-Verlag, Berlin, 1992) pp. 59–63.
S. Wu, Polymer Interface and Adhesion, ( Marcel Dekker Inc., New York, 1982), P. 178.
J. Baglin, in Handbook of Ion Beam Processing Technology, edited by J.J. Cuomo, S.M. Rossnagel, and H.R. Kaufman (Noyes Publications, New Jersey, 1989) p. 279.
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Husein, I.F., Zhou, Y., Chan, C. et al. Carbon Nitride (Cnx) Films Formed by Ion Implantation into Thin Carbon Films. MRS Online Proceedings Library 396, 255 (1995). https://doi.org/10.1557/PROC-396-255