Growth of Vacancy Clusters During Post-Irradiation Annealing of Ion Implanted Silicon

Abstract

Annealing experiments of deuterium implanted silicon have been performed while positron beam analysis was used for monitoring the cavity growth. The experiments indicate up to annealing temperature 500° C similar defect evolution for both the low dose of 1016 cm-2 as for a 3 times higher dose. At this temperature the deuterium stabilized vacancy clusters dissociate and only in the case of the high dose micro-cavities are formed. Monte Carlo simulations of vacancy cluster growth in silicon based on vacancy cluster dissociation energies, calculated with the Stillinger Weber potential, have been performed. The results indicate that for low initial defect concentrations vacancy clusters might be hindered to grow because the vacancy binding energy of the clusters does not increase monotonically with the cluster size. Only a high concentration guarantees that growth barriers will be overcome.

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References

  1. 1

    S.M. Meyers, D.M. Bishop, D.M. Follstaedt, H.J. Stein and W.R. Wampler, Mat. Res. Soc. Symp.283, 549(1993).

    Article  Google Scholar 

  2. 2

    C.C. Griffioen, J.H. Evans, P.C. de Jong and A. van Veen, Nucl. lnstr. and Meth. B27, 417 (1987)

    CAS  Google Scholar 

  3. 3

    Keionen et al Phys. Rev. B 37, 8269 (1988)

  4. 4

    J.S. Williams, J. Wong-Leung, R.D. Goldberg, M. Petravic, Mat. Res. Soc. Proc., 373, 543 (1995)

    CAS  Article  Google Scholar 

  5. 5

    R.S. Brusa, A. Zecca, X.T. Meng, G. Ottaviani, R. Tonini, Materials Science Forum 175–178, 141 (1995)

    Google Scholar 

  6. 6

    A. van Veen, H. Schut, J. de Vries, RA. Hakvoort and M.R, Ijpma in: Positron Beams for Solids and Surfaces, AIP Conf. Proc. 218, eds. P.J. Schultz, G.R. Massoumi, and P.J. Simpson, New York, 1990.

  7. 7

    M. Clement, J.M.M. de Nijs, A.van Veen, H. Schut and P. Balk, to be published in IEEE Trans. Nucl. Sci. (1995)

  8. 8

    J.F. Ziegler, J.P. Biersack and U. Littmark, The Stopping and Range of Ions in Solids (TRIM), Pergamon, New York, 1985.

  9. 9

    R.A. Hakvoort, A. van Veen, P.E. Mijnarends, H. Schut, Applied Surface Science 85, 271 (1995).

    CAS  Article  Google Scholar 

  10. 10

    P. Asoka-Kumar, H.J. Stein and K.G. Lynn, Appl. Phys. Lett. 64, 1684 (1994).

    CAS  Article  Google Scholar 

  11. 11

    A. V. Fedorov and A. van Veen, to be published

  12. 12

    A. v. Veen, H. Schut, R.A. Hakvoort, A. Fedorov and K.T Westerduin, Mat. Res. Soc. Proc, 373, 499 (1995).

    Article  Google Scholar 

  13. 13

    F.H. Stillinger and T.A. Weber, Phys. Rev. B3, 3984(1971).

    Google Scholar 

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van Veen, A., Schut, H., Rivera, A. et al. Growth of Vacancy Clusters During Post-Irradiation Annealing of Ion Implanted Silicon. MRS Online Proceedings Library 396, 155 (1995). https://doi.org/10.1557/PROC-396-155

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