Gas phase reactions between trimethylgallium (TMG) and ammonia were studied at high temperatures, characteristic to MOCVD of GaN reactors, by means of insitu mass spectroscopy in a flow tube reactor. It is shown, that a very fast adduct formation followed by elimination of methane occurs. The decomposition of TMG and the adduct - derived compounds are both first order and have similar apparent activation energy. The pre-exponential factor of the adduct decomposition is smaller, and hence is responsible for the higher full decomposition temperature of the adduct relative to that of TMG.
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Thon, A., Kuech, T. Gas Phase Adduct Reactions in MOCVD Growth of GaN. MRS Online Proceedings Library 395, 97–102 (1995). https://doi.org/10.1557/PROC-395-97