Gas Phase Adduct Reactions in MOCVD Growth of GaN

Abstract

Gas phase reactions between trimethylgallium (TMG) and ammonia were studied at high temperatures, characteristic to MOCVD of GaN reactors, by means of insitu mass spectroscopy in a flow tube reactor. It is shown, that a very fast adduct formation followed by elimination of methane occurs. The decomposition of TMG and the adduct - derived compounds are both first order and have similar apparent activation energy. The pre-exponential factor of the adduct decomposition is smaller, and hence is responsible for the higher full decomposition temperature of the adduct relative to that of TMG.

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Correspondence to A. Thon.

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Thon, A., Kuech, T. Gas Phase Adduct Reactions in MOCVD Growth of GaN. MRS Online Proceedings Library 395, 97–102 (1995). https://doi.org/10.1557/PROC-395-97

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