Electrical Properties of Nichia AlGaN/InGaN/GaN Blue LEDs in a Wide Current/Temperature Range

Abstract

Studies of electrical characteristics of nitride-based light emitting diodes (LEDs) are of interest as they can shed light on carrier transport across the p-n heterojunction. In addition, they provide a convenient way of investigating degradation processes associated with high electrical stress. We present electrical characteristics of Nichia NLPB500 blue LEDs based on AlGaN/InGaN/GaN material system in the temperature range of 9-340 K. Two components of current are identified. High-density current stress leads to diode degradation by shunt formation caused by metal electromigration. At 8 K, blue emission was observed at currents as small as 20 nA.

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Correspondence to Joachim Zeller.

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Zeller, J., Eliseev, P., Sartori, P. et al. Electrical Properties of Nichia AlGaN/InGaN/GaN Blue LEDs in a Wide Current/Temperature Range. MRS Online Proceedings Library 395, 937–942 (1995). https://doi.org/10.1557/PROC-395-937

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