Electrical Properties of Nichia AlGaN/InGaN/GaN Blue LEDs in a Wide Current/Temperature Range

MRS Online Proceedings Library volume 395, pages937–942(1995)Cite this article

Abstract

Studies of electrical characteristics of nitride-based light emitting diodes (LEDs) are of interest as they can shed light on carrier transport across the p-n heterojunction. In addition, they provide a convenient way of investigating degradation processes associated with high electrical stress. We present electrical characteristics of Nichia NLPB500 blue LEDs based on AlGaN/InGaN/GaN material system in the temperature range of 9-340 K. Two components of current are identified. High-density current stress leads to diode degradation by shunt formation caused by metal electromigration. At 8 K, blue emission was observed at currents as small as 20 nA.

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Affiliations

  1. Center for High Technology Materials, University of New Mexico, Albuquerque, NM, 87131-6081, USA

    Joachim Zeller & Marek Osiński

  2. P. N. Lebedev Physics Institute, Russian Academy of Sciences, Moscow, Russia

    Petr G. Eliseev

  3. Ecole Nationale Supérieure des Télécommunications, Paris, France

    Philippe Sartori

  4. High Pressure Research Center, Warsaw, Poland

    Piotr Perlin

Authors
  1. Joachim Zeller
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  2. Petr G. Eliseev
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  3. Philippe Sartori
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  4. Piotr Perlin
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  5. Marek Osiński
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Correspondence to Joachim Zeller.

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Zeller, J., Eliseev, P., Sartori, P. et al. Electrical Properties of Nichia AlGaN/InGaN/GaN Blue LEDs in a Wide Current/Temperature Range. MRS Online Proceedings Library 395, 937–942 (1995). https://doi.org/10.1557/PROC-395-937

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