Schottky Barrier Heights of Ni, Pt, Pd, and Au on n-type GaN

MRS Online Proceedings Library volume 395, pages831–835(1995)Cite this article

Abstract

Schottky barrier heights of Ni, Pt, Pd, and Au on n-type GaN were measured using current-voltage and capacitance-voltage techniques. Measurements from the I-V technique yielded barrier heights of 0.95, 1.01, 0.94, and 0.87 eV for Ni, Pt, Pd, and Au, respectively. Barrier heights of 1.13,1.16, 1.07, and 0.98 eV, for Ni, Pt, Pd, and Au, respectively, were obtained using C-V measurements.

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Affiliations

  1. Center for Compound Semiconductor Microelectronics, and Department of Electrical and Computer Engineering, University of Illinois, Urbana-Champaign, Illinois, 61801, USA

    A.C. Schmitz, A.T. Ping & I. Adesida

  2. APA Optics, Inc., Blaine, Minnesota, 55449, USA

    M. Asif khan

Authors
  1. A.C. Schmitz
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  2. A.T. Ping
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  3. M. Asif khan
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  4. I. Adesida
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Correspondence to A.C. Schmitz.

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Schmitz, A., Ping, A., Asif khan, M. et al. Schottky Barrier Heights of Ni, Pt, Pd, and Au on n-type GaN. MRS Online Proceedings Library 395, 831–835 (1995). https://doi.org/10.1557/PROC-395-831

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