Interfacial Reactions Between Metal Thin Films and p-GaN

Abstract

The reactions between Au, Au/Ni and Au/C/Ni thin films on p-GaN have been studied using current-voltage (I-V) measurements, Auger electron spectroscopy (AES) and secondary ion mass spectrometry (SIMS). The metallization schemes consisted of ≈2000Ǻ sputtered Au, 1000Ǻ Au/500Ǻ Ni, and 1000Ǻ Au/100Ǻ C/500Ǻ Ni electron beam evaporated. The Au/Ni metallization scheme is of particular interest since it is the basis for the most commonly used ohmic p-type contacts for blue GaN LED’s. Au does not decompose the GaN matrix, while Ni has been shown to react with GaN above a temperature of 400° C for times longer than 5 minutes. Upon decomposition of the GaN by Ni, incorporation of C at the metal/GaN interface occurred. It is believed that a regrowth of GaN occurred, with the surface region being doped with C. Attempts at increasing this doping concentration by introducing an interfacial C layer were not successful.

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Correspondence to J.T. Trexler.

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Trexler, J., Miller, S., Holloway, P. et al. Interfacial Reactions Between Metal Thin Films and p-GaN. MRS Online Proceedings Library 395, 819–824 (1995). https://doi.org/10.1557/PROC-395-819

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